Characterization of In0.5Ga0.5As quantum dot p-i-n structures with different matrices

Nien Tze Yeh, Tzer En Nee, Jen Inn Chyi

研究成果: 雜誌貢獻會議論文同行評審

3 引文 斯高帕斯(Scopus)

摘要

The characteristics of self-assembled In0.5Ga0.5As quantum dot p-i-n structures with In0.1Ga0.9As, GaAs, and In0.1Al0.9As matrices are investigated using electroluminescence (EL) and current-voltage (I-V) measurements. EL spectra indicate that the quantum dots in In0.1Ga0.9As matrix exhibit higher intensity as compared with those in GaAs and In0.1Al0.9As matrices. The state filling effect is observed in the power dependent EL spectra for the In0.5Ga0.5As quantum dots in In0.1Ga0.9As and GaAs matrices. I-V characteristics show that carrier tunneling-recombination is the dominant process at low bias and low temperature region for the dots in In0.1Ga0.9As and GaAs matrices. Whereas, the quantum dots in In0.1Al0.9As matrix exhibit poor optical and electrical properties due to higher defect density.

原文???core.languages.en_GB???
頁(從 - 到)1168-1171
頁數4
期刊Journal of Crystal Growth
201
DOIs
出版狀態已出版 - 5月 1999
事件Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes
持續時間: 31 8月 19984 9月 1998

指紋

深入研究「Characterization of In0.5Ga0.5As quantum dot p-i-n structures with different matrices」主題。共同形成了獨特的指紋。

引用此