Characterization of InAlAs/In0.25Ga0.75As 0.72Sb0.28/InGaAs double heterojunction bipolar transistors

Chao Min Chang, Shu Han Chen, Sheng Yu Wang, Jen Inn Chyi

研究成果: 書貢獻/報告類型會議論文篇章同行評審

2 引文 斯高帕斯(Scopus)

摘要

We report on the characterization of InP-based heterojunction bipolar transistors (HBTs) with low turn-on voltage and high current gain by using InGaAsSb as the base layer. The low turn-on voltage of 0.43 V is attributed to the smaller band gap of the In0.25Ga0.75As 072Sb0.28 material. High current gain of 74 is observed despite a heavily Be-doped (9.0×1019 cm-3) base is used, suggesting a long minority carrier lifetime (τn) in the InGaAsSb material. Moreover, low specific contact resistivity of 5×10 -8 Ω-cm2 is also demonstrated on separate In 0.25Ga0.75As072Sb0.28 samples.

原文???core.languages.en_GB???
主出版物標題2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings
頁面309-311
頁數3
DOIs
出版狀態已出版 - 2010
事件22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010 - Kagawa, Japan
持續時間: 31 5月 20104 6月 2010

出版系列

名字Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN(列印)1092-8669

???event.eventtypes.event.conference???

???event.eventtypes.event.conference???22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010
國家/地區Japan
城市Kagawa
期間31/05/104/06/10

指紋

深入研究「Characterization of InAlAs/In0.25Ga0.75As 0.72Sb0.28/InGaAs double heterojunction bipolar transistors」主題。共同形成了獨特的指紋。

引用此