摘要
A two-peak feature of stimulated emission (SE) from InGaN/GaN quantum well samples is described. Further, evidences of indium aggregation and phase separation from material analysis are reported.
原文 | ???core.languages.en_GB??? |
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頁面 | 244-245 |
頁數 | 2 |
出版狀態 | 已出版 - 2000 |
事件 | Conference on Lasers and Electro-Optics (CLEO 2000) - San Francisco, CA, USA 持續時間: 7 5月 2000 → 12 5月 2000 |
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???event.eventtypes.event.conference??? | Conference on Lasers and Electro-Optics (CLEO 2000) |
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城市 | San Francisco, CA, USA |
期間 | 7/05/00 → 12/05/00 |