摘要
The pseudomorphic properties of doped-channel field-effect transistors have been thoroughly investigated based on AlGaAs/InxGa1-xAs (0≤x≤0.25) heterostructures with different In contents. Through various analytical schemes and device characterization, we observed that by introducing a 150 Å strained In0.15Ga0.85As channel we can enhance device performance; however, this strained channel is not stable after high-temperature heat treatment. By further increasing the In content up to x=0.25, the device performance started to degrade, which is associated with strain relaxation in this highly strained channel.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 2494-2498 |
頁數 | 5 |
期刊 | Journal of Applied Physics |
卷 | 76 |
發行號 | 4 |
DOIs | |
出版狀態 | 已出版 - 1994 |