摘要
A GaAsSb step-graded metamorphic buffer layer is used for growing InAs/AlSb high electron mobility transistor structures on Si substrate by molecular beam epitaxy. The step-graded metamorphic buffer layer effectively reduces the number of microtwins and stacking faults penetrating to the InAs channel as evidenced by transmission electron microscopy. By reducing the planar defects with the metamorphic buffer layer, a significant improvement on electron mobility up to 18 100 cm2/V s and 39 700 cm2/V s at room temperature and 77 K, respectively, is achieved.
原文 | ???core.languages.en_GB??? |
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文章編號 | 61207 |
期刊 | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
卷 | 31 |
發行號 | 6 |
DOIs | |
出版狀態 | 已出版 - 11月 2013 |