Characteristics of InAs/AlSb high electron mobility transistors grown on Si using a GaAsSb step-graded buffer layer

Pei Chin Chiu, Wei Jen Hsueh, Nien Tze Yeh, Chao Ching Cheng, You Ru Lin, Chih Hsin Ko, Clement H. Wann, Jen Inn Chyi

研究成果: 雜誌貢獻期刊論文同行評審

1 引文 斯高帕斯(Scopus)

摘要

A GaAsSb step-graded metamorphic buffer layer is used for growing InAs/AlSb high electron mobility transistor structures on Si substrate by molecular beam epitaxy. The step-graded metamorphic buffer layer effectively reduces the number of microtwins and stacking faults penetrating to the InAs channel as evidenced by transmission electron microscopy. By reducing the planar defects with the metamorphic buffer layer, a significant improvement on electron mobility up to 18 100 cm2/V s and 39 700 cm2/V s at room temperature and 77 K, respectively, is achieved.

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文章編號61207
期刊Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
31
發行號6
DOIs
出版狀態已出版 - 11月 2013

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