Characteristics of fully quaternary In0.52(Al0.8Ga0.2)0.48As/In 0.53(Al0.2Ga0.8)0.47As heterostructures in doped-channel FETs

L. S. Lai, Y. J. Chan, J. W. Pan, J. I. Chyi

研究成果: 雜誌貢獻期刊論文同行評審

4 引文 斯高帕斯(Scopus)

指紋

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Engineering & Materials Science