Characteristics of fully quaternary In0.52(Al0.8Ga0.2)0.48As/In 0.53(Al0.2Ga0.8)0.47As heterostructures in doped-channel FETs

L. S. Lai; Y. J. Chan; J. W. Pan; J. I. Chyi

doi:10.1049/el:19980200

Characteristics of fully quaternary In_0.52(Al_0.8Ga_0.2)_0.48As/In _0.53(Al_0.2Ga_0.8)_0.47As heterostructures in doped-channel FETs

L. S. Lai, Y. J. Chan, J. W. Pan, J. I. Chyi

電機工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

4 引文斯高帕斯（Scopus）

摘要

A fully quaternary In_0.52(Al_0.8Ga_0.2)_0.48As/In _0.53(Al_0.2Ga_0.8)_0.47As heterostructure was introduced into doped-channel FETs (fully-Q DCFETs) on InP substrates for the first time. Combining the advantages of high quality quaternary InAlGaAs Schottky and channel layers, the authors were able to enhance device gate-to-drain and channel breakdown voltages, and to eliminate the kink effect. This results in an extremely low output conductance (g_o = 0.6mS/mm), and a high DC gain ratio (g_mg_o ≃ 350).

原文	???core.languages.en_GB???
頁（從 - 到）	308-309
頁數	2
期刊	Electronics Letters
卷	34
發行號	3
DOIs	https://doi.org/10.1049/el:19980200
出版狀態	已出版 - 5 2月 1998

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10.1049/el:19980200

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title = "Characteristics of fully quaternary In0.52(Al0.8Ga0.2)0.48As/In 0.53(Al0.2Ga0.8)0.47As heterostructures in doped-channel FETs",

abstract = "A fully quaternary In0.52(Al0.8Ga0.2)0.48As/In 0.53(Al0.2Ga0.8)0.47As heterostructure was introduced into doped-channel FETs (fully-Q DCFETs) on InP substrates for the first time. Combining the advantages of high quality quaternary InAlGaAs Schottky and channel layers, the authors were able to enhance device gate-to-drain and channel breakdown voltages, and to eliminate the kink effect. This results in an extremely low output conductance (go = 0.6mS/mm), and a high DC gain ratio (gmgo ≃ 350).",

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T1 - Characteristics of fully quaternary In0.52(Al0.8Ga0.2)0.48As/In 0.53(Al0.2Ga0.8)0.47As heterostructures in doped-channel FETs

AU - Lai, L. S.

AU - Chan, Y. J.

AU - Pan, J. W.

AU - Chyi, J. I.

PY - 1998/2/5

Y1 - 1998/2/5

N2 - A fully quaternary In0.52(Al0.8Ga0.2)0.48As/In 0.53(Al0.2Ga0.8)0.47As heterostructure was introduced into doped-channel FETs (fully-Q DCFETs) on InP substrates for the first time. Combining the advantages of high quality quaternary InAlGaAs Schottky and channel layers, the authors were able to enhance device gate-to-drain and channel breakdown voltages, and to eliminate the kink effect. This results in an extremely low output conductance (go = 0.6mS/mm), and a high DC gain ratio (gmgo ≃ 350).

AB - A fully quaternary In0.52(Al0.8Ga0.2)0.48As/In 0.53(Al0.2Ga0.8)0.47As heterostructure was introduced into doped-channel FETs (fully-Q DCFETs) on InP substrates for the first time. Combining the advantages of high quality quaternary InAlGaAs Schottky and channel layers, the authors were able to enhance device gate-to-drain and channel breakdown voltages, and to eliminate the kink effect. This results in an extremely low output conductance (go = 0.6mS/mm), and a high DC gain ratio (gmgo ≃ 350).

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DO - 10.1049/el:19980200

M3 - 期刊論文

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SN - 0013-5194

VL - 34

SP - 308

EP - 309

JO - Electronics Letters

JF - Electronics Letters

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Characteristics of fully quaternary In0.52(Al0.8Ga0.2)0.48As/In 0.53(Al0.2Ga0.8)0.47As heterostructures in doped-channel FETs

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Characteristics of fully quaternary In_0.52(Al_0.8Ga_0.2)_0.48As/In _0.53(Al_0.2Ga_0.8)_0.47As heterostructures in doped-channel FETs