Characteristics of Charge Persistence in InGaAs/InP Single-Photon Avalanche Diode

Yi Shan Lee, Kuan Yu Chen, Sheng Yu Chien, Shih Cheng Chang

研究成果: 雜誌貢獻期刊論文同行評審

7 引文 斯高帕斯(Scopus)

摘要

We present an experimental study of charge persistence effect in InGaAs/InP single-photon avalanche diodes based on their dark and illuminated characteristics. It is well known that the sources of dark carriers mainly originate from thermal generation, trap-Assisted tunneling, and afterpulsing, where these mechanisms are dominant in the dark count rate performance at different temperature ranges. In this letter, besides the above-mentioned mechanisms, we further address an additional mechanism involved that competes with suppression of thermal carriers when the temperature is decreased. A good correspondence is observed by comparing the dark characteristics with the illuminated characteristics, showing that the additional spurious signals occurred at intermediate temperature range originate from the charge persistence effect.

原文???core.languages.en_GB???
文章編號8482252
頁(從 - 到)1980-1982
頁數3
期刊IEEE Photonics Technology Letters
30
發行號22
DOIs
出版狀態已出版 - 15 11月 2018

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