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摘要
We present an experimental study of charge persistence effect in InGaAs/InP single-photon avalanche diodes based on their dark and illuminated characteristics. It is well known that the sources of dark carriers mainly originate from thermal generation, trap-Assisted tunneling, and afterpulsing, where these mechanisms are dominant in the dark count rate performance at different temperature ranges. In this letter, besides the above-mentioned mechanisms, we further address an additional mechanism involved that competes with suppression of thermal carriers when the temperature is decreased. A good correspondence is observed by comparing the dark characteristics with the illuminated characteristics, showing that the additional spurious signals occurred at intermediate temperature range originate from the charge persistence effect.
原文 | ???core.languages.en_GB??? |
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文章編號 | 8482252 |
頁(從 - 到) | 1980-1982 |
頁數 | 3 |
期刊 | IEEE Photonics Technology Letters |
卷 | 30 |
發行號 | 22 |
DOIs | |
出版狀態 | 已出版 - 15 11月 2018 |
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