Characteristics of amplified spontaneous emission of high indium content InGaN/GaN quantum wells with various silicon doping conditions

Yung Chen Cheng, En Chiang Lin, Shih Wei Feng, Hsiang Chen Wang, C. C. Yang, Kung Jen Ma, Chang Chi Pan, Jen Inn Chyi

研究成果: 雜誌貢獻會議論文同行評審

摘要

We compared the temperature dependent spectral variations of the amplified spontaneous emission (ASE) between InGaN/GaN quantum well samples of no doping, well doping, and barrier doping of silicon. The comparisons were particularly made between two series of samples with a low and a high indium content. The results show that a multi-peak ASE spectral feature and a low energy stimulated emission peak, existing at the photoluminescence shoulder, could be observed only in the high-indium-content, barrier-doped sample. Such results are supposed to originate from the formation of quantum dots of various sizes, concentrations, and shapes under the condition of barrier doping in the sample.

原文???core.languages.en_GB???
頁(從 - 到)2670-2673
頁數4
期刊Physica Status Solidi C: Conferences
發行號7
DOIs
出版狀態已出版 - 2003
事件5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
持續時間: 25 5月 200330 5月 2003

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