We compared the temperature dependent spectral variations of the amplified spontaneous emission (ASE) between InGaN/GaN quantum well samples of no doping, well doping, and barrier doping of silicon. The comparisons were particularly made between two series of samples with a low and a high indium content. The results show that a multi-peak ASE spectral feature and a low energy stimulated emission peak, existing at the photoluminescence shoulder, could be observed only in the high-indium-content, barrier-doped sample. Such results are supposed to originate from the formation of quantum dots of various sizes, concentrations, and shapes under the condition of barrier doping in the sample.
|頁（從 - 到）||2670-2673|
|期刊||Physica Status Solidi C: Conferences|
|出版狀態||已出版 - 2003|
|事件||5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan|
持續時間: 25 5月 2003 → 30 5月 2003