摘要
We compared the temperature dependent spectral variations of the amplified spontaneous emission (ASE) between InGaN/GaN quantum well samples of no doping, well doping, and barrier doping of silicon. The comparisons were particularly made between two series of samples with a low and a high indium content. The results show that a multi-peak ASE spectral feature and a low energy stimulated emission peak, existing at the photoluminescence shoulder, could be observed only in the high-indium-content, barrier-doped sample. Such results are supposed to originate from the formation of quantum dots of various sizes, concentrations, and shapes under the condition of barrier doping in the sample.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 2670-2673 |
頁數 | 4 |
期刊 | Physica Status Solidi C: Conferences |
發行號 | 7 |
DOIs | |
出版狀態 | 已出版 - 2003 |
事件 | 5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan 持續時間: 25 5月 2003 → 30 5月 2003 |