摘要
The quaternary In0.52(AlxGa1-x)0.48As compound on InP substrates is an important material for use in optoelectronic and microwave devices. We have systematically investigated the electrical properties of quaternary In0.52(AlxGa1-x)0.48As layers, and found that a 10% addition of Ga atoms into the InAlAs layer improves the Schottky diode performance. The energy bandgap (Eg) for the In0.52(AlxGa1-x)0.48As layer was (0.806 + 0.711x) eV, and the associated conduction-band discontinuity (ΔEc), in the InAlGaAs/In0.53Ga0.47As heterojunction, was around (0.68 ± 0.01)ΔEg. Using this high quality In0.52(Al0.9Ga0.1)0.48As layer in the Schottky and buffer layers, we obtained quaternary In0.52(Al0.9Ga0.1)0.48As/In 0.53Ga0.47As HEMT's. This quaternary HEMT revealed excellent dc and microwave characteristics. In comparison with the conventional InAlAs/InGaAs HEMT's, quaternary HEMT's demonstrated improved sidegating and device reliability.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 708-714 |
頁數 | 7 |
期刊 | IEEE Transactions on Electron Devices |
卷 | 44 |
發行號 | 5 |
DOIs | |
出版狀態 | 已出版 - 1997 |