Characteristics of a in0.52(AlxGa1-x)0.48As/In 0.53Ga0.47As(0 ≤ x ≤ 1) heterojunction and its application on HEMT's

Yi Jen Chan; Chia Song Wu; Chun Hung Chen; Jia Lin Shieh; Jen Inn Chyi

doi:10.1109/16.568030

Characteristics of a in_0.52(Al_xGa_1-x)_0.48As/In _0.53Ga_0.47As(0 ≤ x ≤ 1) heterojunction and its application on HEMT's

Yi Jen Chan, Chia Song Wu, Chun Hung Chen, Jia Lin Shieh, Jen Inn Chyi

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

3 引文斯高帕斯（Scopus）

摘要

The quaternary In_0.52(Al_xGa_1-x)_0.48As compound on InP substrates is an important material for use in optoelectronic and microwave devices. We have systematically investigated the electrical properties of quaternary In_0.52(Al_xGa_1-x)0.48As layers, and found that a 10% addition of Ga atoms into the InAlAs layer improves the Schottky diode performance. The energy bandgap (E_g) for the In_0.52(Al_xGa_1-x)_0.48As layer was (0.806 + 0.711_x) eV, and the associated conduction-band discontinuity (ΔE_c), in the InAlGaAs/In_0.53Ga_0.47As heterojunction, was around (0.68 ± 0.01)ΔE_g. Using this high quality In_0.52(Al_0.9Ga_0.1)_0.48As layer in the Schottky and buffer layers, we obtained quaternary In_0.52(Al_0.9Ga_0.1)_0.48As/In _0.53Ga_0.47As HEMT's. This quaternary HEMT revealed excellent dc and microwave characteristics. In comparison with the conventional InAlAs/InGaAs HEMT's, quaternary HEMT's demonstrated improved sidegating and device reliability.

原文	???core.languages.en_GB???
頁（從 - 到）	708-714
頁數	7
期刊	IEEE Transactions on Electron Devices
卷	44
發行號	5
DOIs	https://doi.org/10.1109/16.568030
出版狀態	已出版 - 1997

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10.1109/16.568030

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@article{fd705828cf0a4468a01b1ab2690a16ae,

title = "Characteristics of a in0.52(AlxGa1-x)0.48As/In 0.53Ga0.47As(0 ≤ x ≤ 1) heterojunction and its application on HEMT's",

abstract = "The quaternary In0.52(AlxGa1-x)0.48As compound on InP substrates is an important material for use in optoelectronic and microwave devices. We have systematically investigated the electrical properties of quaternary In0.52(AlxGa1-x)0.48As layers, and found that a 10% addition of Ga atoms into the InAlAs layer improves the Schottky diode performance. The energy bandgap (Eg) for the In0.52(AlxGa1-x)0.48As layer was (0.806 + 0.711x) eV, and the associated conduction-band discontinuity (ΔEc), in the InAlGaAs/In0.53Ga0.47As heterojunction, was around (0.68 ± 0.01)ΔEg. Using this high quality In0.52(Al0.9Ga0.1)0.48As layer in the Schottky and buffer layers, we obtained quaternary In0.52(Al0.9Ga0.1)0.48As/In 0.53Ga0.47As HEMT's. This quaternary HEMT revealed excellent dc and microwave characteristics. In comparison with the conventional InAlAs/InGaAs HEMT's, quaternary HEMT's demonstrated improved sidegating and device reliability.",

author = "Chan, {Yi Jen} and Wu, {Chia Song} and Chen, {Chun Hung} and Shieh, {Jia Lin} and Chyi, {Jen Inn}",

note = "Funding Information: Manuscript received February 29, 1996; revised November 19, 1996. The review of this paper was arranged by Editor P. M. Solomon. This work was supported by the National Science Council, R.O.C., under Contract NSC85-2221-E-008-017. The authors are with the Department of Electrical Engineering, National Central University, Chungli 32054, Taiwan R.O.C. Publisher Item Identifier S 0018-9383(97)02990-0.",

year = "1997",

doi = "10.1109/16.568030",

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volume = "44",

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T1 - Characteristics of a in0.52(AlxGa1-x)0.48As/In 0.53Ga0.47As(0 ≤ x ≤ 1) heterojunction and its application on HEMT's

AU - Chan, Yi Jen

AU - Wu, Chia Song

AU - Chen, Chun Hung

AU - Shieh, Jia Lin

AU - Chyi, Jen Inn

N1 - Funding Information: Manuscript received February 29, 1996; revised November 19, 1996. The review of this paper was arranged by Editor P. M. Solomon. This work was supported by the National Science Council, R.O.C., under Contract NSC85-2221-E-008-017. The authors are with the Department of Electrical Engineering, National Central University, Chungli 32054, Taiwan R.O.C. Publisher Item Identifier S 0018-9383(97)02990-0.

PY - 1997

Y1 - 1997

N2 - The quaternary In0.52(AlxGa1-x)0.48As compound on InP substrates is an important material for use in optoelectronic and microwave devices. We have systematically investigated the electrical properties of quaternary In0.52(AlxGa1-x)0.48As layers, and found that a 10% addition of Ga atoms into the InAlAs layer improves the Schottky diode performance. The energy bandgap (Eg) for the In0.52(AlxGa1-x)0.48As layer was (0.806 + 0.711x) eV, and the associated conduction-band discontinuity (ΔEc), in the InAlGaAs/In0.53Ga0.47As heterojunction, was around (0.68 ± 0.01)ΔEg. Using this high quality In0.52(Al0.9Ga0.1)0.48As layer in the Schottky and buffer layers, we obtained quaternary In0.52(Al0.9Ga0.1)0.48As/In 0.53Ga0.47As HEMT's. This quaternary HEMT revealed excellent dc and microwave characteristics. In comparison with the conventional InAlAs/InGaAs HEMT's, quaternary HEMT's demonstrated improved sidegating and device reliability.

AB - The quaternary In0.52(AlxGa1-x)0.48As compound on InP substrates is an important material for use in optoelectronic and microwave devices. We have systematically investigated the electrical properties of quaternary In0.52(AlxGa1-x)0.48As layers, and found that a 10% addition of Ga atoms into the InAlAs layer improves the Schottky diode performance. The energy bandgap (Eg) for the In0.52(AlxGa1-x)0.48As layer was (0.806 + 0.711x) eV, and the associated conduction-band discontinuity (ΔEc), in the InAlGaAs/In0.53Ga0.47As heterojunction, was around (0.68 ± 0.01)ΔEg. Using this high quality In0.52(Al0.9Ga0.1)0.48As layer in the Schottky and buffer layers, we obtained quaternary In0.52(Al0.9Ga0.1)0.48As/In 0.53Ga0.47As HEMT's. This quaternary HEMT revealed excellent dc and microwave characteristics. In comparison with the conventional InAlAs/InGaAs HEMT's, quaternary HEMT's demonstrated improved sidegating and device reliability.

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U2 - 10.1109/16.568030

DO - 10.1109/16.568030

M3 - 期刊論文

AN - SCOPUS:0031145158

SN - 0018-9383

VL - 44

SP - 708

EP - 714

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 5

ER -

Characteristics of a in0.52(AlxGa1-x)0.48As/In 0.53Ga0.47As(0 ≤ x ≤ 1) heterojunction and its application on HEMT's

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Characteristics of a in_0.52(Al_xGa_1-x)_0.48As/In _0.53Ga_0.47As(0 ≤ x ≤ 1) heterojunction and its application on HEMT's