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Characteristic improvements of vertically aligned columnar quantum dot solar cell with a GaAsSb capping layer
Wei Sheng Liu
, Hsin Lun Tseng
, Tien Hao Huang
, Ting Fu Chu
, Po Chen Kuo
, Fu Hsiang Tsao
,
Jen Inn Chyi
前瞻科技研究中心
電機工程學系
光電科學研究中心
研究成果
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Keyphrases
Columnar
100%
Capping Layer
100%
Vertically Aligned
100%
GaAsSb
100%
Quantum Dot Sensitized Solar Cell (QDSSC)
100%
Quantum Dot Structures
42%
Quantum Dots
28%
Gallium Arsenide
28%
Optical Properties
28%
Thermal Stability
14%
Carrier Lifetime
14%
Current Density
14%
Device Performance
14%
Photoluminescence Measurements
14%
Open-circuit Voltage
14%
Solar Cell Devices
14%
Recombination Current Density
14%
Short-circuit Current Density
14%
Defect Density
14%
Reference Cell
14%
Type-II Band Structure
14%
Size Uniformity
14%
Misfit
14%
Quantum Efficiency
14%
Power Dependent Photoluminescence
14%
Intermediate Band Solar Cell
14%
Columnar Dots
14%
Capping Process
14%
Dot Size
14%
Strain Modification
14%
Layer Growth
14%
Defect Recombination
14%
Low-energy Photons
14%
Time-resolved Photoluminescence
14%
InAs Quantum Dots
14%
Engineering
Quantum Dot
100%
Capping Layer
100%
Solar Cell
100%
Experimental Result
14%
Gallium Arsenide
14%
Quantum Efficiency
14%
Dot Layer
14%
Carrier Lifetime
14%
Band Structure
14%
Device Performance
14%
Short-Circuit Current Density
14%
Open Circuit Voltage
14%
Reference Cell
14%
Defect Density
14%
Intermediate Band Solar Cell
14%
Gaas Reference
14%
Material Science
Solar Cell
100%
Quantum Dot
100%
Density
28%
Photoluminescence
28%
Electronic Circuit
28%
Optical Property
28%
Gallium Arsenide
28%
Thermal Stability
14%
Carrier Lifetime
14%
Defect Density
14%
Intermediate Band Solar Cell
14%