摘要
III-nitride blue (λ = 450 nm) LEDs were fabricated on ceramic substrates using thin-film and high-voltage processes. The device, comprising sixteen cascaded sub-LEDs, exhibits excellent current spreading and thermal resilience. Under the driving power of 1800W/cm2 (J = 450 A/cm 2), the high-voltage thin-film LED delivers unsaturated output power and alleviated efficiency droop, which is not achievable with devices fabricated on Si or sapphire substrates with identical epitaxial structure.
原文 | ???core.languages.en_GB??? |
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文章編號 | 022103 |
期刊 | Applied Physics Express |
卷 | 7 |
發行號 | 2 |
DOIs | |
出版狀態 | 已出版 - 2月 2014 |