跳至主導覽
跳至搜尋
跳過主要內容
國立中央大學 首頁
說明與常見問題
!!Link opens in a new tab
English
中文
在 國立中央大學 搜尋內容
首頁
人才檔案
研究單位
研究計畫
研究成果
資料集
榮譽/獲獎
學術活動
新聞/媒體
影響
Carrier transport study of TMIn-treated InGaN LEDs by using quantum efficiency and time-resolved electro-luminescence measurements
Shih Wei Feng
,
Jen Inn Chyi
前瞻科技研究中心
電機工程學系
光電科學研究中心
研究成果
:
雜誌貢獻
›
期刊論文
›
同行評審
4
引文 斯高帕斯（Scopus）
總覽
指紋
指紋
深入研究「Carrier transport study of TMIn-treated InGaN LEDs by using quantum efficiency and time-resolved electro-luminescence measurements」主題。共同形成了獨特的指紋。
排序方式
重量
按字母排序
Keyphrases
Indium Gallium Nitride (InGaN)
100%
Light-emitting Diodes
100%
Carrier Transport
100%
Quantum Efficiency
100%
Transport Studies
100%
Quantum Time
100%
Luminescence Measurements
100%
Time-resolved Electroluminescence
100%
Efficiency Droop
50%
Response Time
50%
Defect Density
50%
Time-to-treatment
50%
Carrier Recombination
50%
Carrier Injection
50%
V-shaped Defect
50%
Active Regions
25%
Spectral Width
25%
Peak Position
25%
Applied Voltage
25%
Device Performance
25%
Quantum Well
25%
Decay Time
25%
Blue Shift
25%
V-shaped
25%
Green Light-emitting Diodes
25%
Carrier Localization
25%
Polarization Field
25%
Device Characteristics
25%
Indium Composition
25%
Luminescence Efficiency
25%
Narrow Spectrum
25%
Transport Characteristics
25%
Recombination Dynamics
25%
Short Response Time
25%
Non-radiative Decay
25%
Carrier Delocalization
25%
Auger Recombination
25%
Radiative Decay Rate
25%
Engineering
Quantum Efficiency
100%
Light-Emitting Diode
100%
Luminaires
100%
Response Time
60%
Efficiency Droop
40%
Defect Density
40%
Quantum Well
20%
Applied Voltage
20%
Decay Time
20%
Active Region
20%
Polarization Field
20%
Auger Recombination
20%
Narrow Spectrum Width
20%
Material Science
Light-Emitting Diode
100%
Carrier Transport
100%
Electroluminescence
100%
Defect Density
40%
Density
20%
Indium
20%
Quantum Well
20%
Luminescence
20%