Carrier transport study of TMIn-treated InGaN LEDs by using quantum efficiency and time-resolved electro-luminescence measurements

Keyphrases

• Indium Gallium Nitride (InGaN) 100%
• Light-emitting Diodes 100%
• Carrier Transport 100%
• Quantum Efficiency 100%
• Transport Studies 100%
• Quantum Time 100%
• Luminescence Measurements 100%
• Time-resolved Electroluminescence 100%
• Efficiency Droop 50%
• Response Time 50%
• Defect Density 50%
• Time-to-treatment 50%
• Carrier Recombination 50%
• Carrier Injection 50%
• V-shaped Defect 50%
• Active Regions 25%
• Spectral Width 25%
• Peak Position 25%
• Applied Voltage 25%
• Device Performance 25%
• Quantum Well 25%
• Decay Time 25%
• Blue Shift 25%
• V-shaped 25%
• Green Light-emitting Diodes 25%
• Carrier Localization 25%
• Polarization Field 25%
• Device Characteristics 25%
• Indium Composition 25%
• Luminescence Efficiency 25%
• Narrow Spectrum 25%
• Transport Characteristics 25%
• Recombination Dynamics 25%
• Short Response Time 25%
• Non-radiative Decay 25%
• Carrier Delocalization 25%
• Auger Recombination 25%
• Radiative Decay Rate 25%

Engineering

• Quantum Efficiency 100%
• Light-Emitting Diode 100%
• Luminaires 100%
• Response Time 60%
• Efficiency Droop 40%
• Defect Density 40%
• Quantum Well 20%
• Applied Voltage 20%
• Decay Time 20%
• Active Region 20%
• Polarization Field 20%
• Auger Recombination 20%
• Narrow Spectrum Width 20%

Material Science

• Light-Emitting Diode 100%
• Carrier Transport 100%
• Electroluminescence 100%
• Defect Density 40%
• Density 20%
• Indium 20%
• Quantum Well 20%
• Luminescence 20%