Carrier transport studies of dichromatic InGaN-based LEDs with spacer bandgap dependence

Shih Wei Feng, C. C. Pan, Jen Inn Chyi, Chien Nan Kuo, Kuei Hsien Chen

研究成果: 雜誌貢獻會議論文同行評審

1 引文 斯高帕斯(Scopus)

摘要

Carrier transport of dichromatic InGaN-based LEDs with AlGaN spacer bandgap dependence has been studied. TREL measurements show that carrier dynamics could be well explained by the combined effects of carrier effective mass, carrier mobility, quantum confinement, and device structures. The experimental results provide important information for device designs.

原文???core.languages.en_GB???
頁(從 - 到)2716-2719
頁數4
期刊Physica Status Solidi (C) Current Topics in Solid State Physics
4
發行號7
DOIs
出版狀態已出版 - 2007
事件International Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan
持續時間: 22 10月 200627 10月 2006

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