We report the fast and slow decay lifetimes of multi-component photoluminescence (PL) intensity decays in the time-resolved photoluminescence measurements at the room temperature and a low temperature. The fast decay component was essentially due to carrier dynamics, that is, carrier flow between strongly localized and weakly localized states. Such a carrier relaxation process results in extremely long PL decay time (up to almost 300 ns) for strongly localized states at the low temperature. At room temperature, because of thermal energy and hence carrier escape from strongly localized states, effective lifetimes becomes shorter.
|頁（從 - 到）||197-200|
|期刊||Proceedings of SPIE - The International Society for Optical Engineering|
|出版狀態||已出版 - 2001|