Carrier dynamics in InGaN/GaN multiple quantum well structures

Shih Wei Feng, Yung Chen Cheng, Yi Yin Chung, Ming Hua Mao, Chih Chung Yang, Yen Sheng Lin, Kung Jeng Ma, Jen Inn Chyi

研究成果: 雜誌貢獻期刊論文同行評審

1 引文 斯高帕斯(Scopus)


We report the fast and slow decay lifetimes of multi-component photoluminescence (PL) intensity decays in the time-resolved photoluminescence measurements at the room temperature and a low temperature. The fast decay component was essentially due to carrier dynamics, that is, carrier flow between strongly localized and weakly localized states. Such a carrier relaxation process results in extremely long PL decay time (up to almost 300 ns) for strongly localized states at the low temperature. At room temperature, because of thermal energy and hence carrier escape from strongly localized states, effective lifetimes becomes shorter.

頁(從 - 到)197-200
期刊Proceedings of SPIE - The International Society for Optical Engineering
出版狀態已出版 - 2001


深入研究「Carrier dynamics in InGaN/GaN multiple quantum well structures」主題。共同形成了獨特的指紋。