Buffer-Free Ge/Si by Rapid Melting Growth Technique for Separate Absorption and Multiplication Avalanche Photodetectors

Keyphrases

• Germanium 100%
• Separate Absorption 100%
• Rapid Melting Growth 100%
• Growth Techniques 100%
• Avalanche Photodetector 100%
• Bufferless 100%
• Germanium Film 66%
• Raman Spectroscopy 33%
• CMOS Technology 33%
• Photocurrent 33%
• Electrical Measurements 33%
• Photoelectric Conversion Efficiency 33%
• Near-infrared Spectrum 33%
• Low Bias 33%
• Photodetector 33%
• High Gain 33%
• Nanocrystallites 33%
• High Responsivity 33%
• Recombination Centers 33%
• Si Layer 33%
• Electron Microscopy 33%
• Absorption Layer 33%
• Photogenerated Electron-hole Pairs 33%
• Silicon-germanium 33%
• SiGe Layer 33%
• Characteristics Measurement 33%

Engineering

• Avalanche Multiplication 100%
• Melting Point 100%
• Photometer 100%
• Photocurrent 33%
• Conversion Efficiency 33%
• Photodetector 33%
• Responsivity 33%
• Hole Pair 33%
• Recombination Centre 33%
• Absorption Layer 33%
• Electrical Measurement 33%

Material Science

• Germanium 100%
• Photosensor 100%
• Film 40%
• Silicon 20%
• Raman Spectroscopy 20%
• Nanocrystallites 20%
• Electron Microscopy 20%