@article{14c6516dbad14580b950b6d2a48b8020,
title = "Broadband and low-loss 1:9 transmission-line transformer in 0.18-μm CMOS process",
abstract = "This letter proposes a transmission-line transformer (TLT) with high impedance-transformation ratio of 1:9 for wideband power amplifier design. The 1:9 TLT is realized with broadside-coupled and multiple-metal stacked transmission lines and achieves a broadband impedance transformation from 5.0±0.1Ω optimal load impedance of the power cell to 50-Ω load with a bandwidth of 4.4 to 6.6 GHz, which covers the required bandwidth of the IEEE 802.11a WLAN application. The measured minimum insertion loss is 1.07 dB at 5.8 GHz with a 3-dB bandwidth of 164%. This 1:9 TLT is fabricated in standard 0.18-μm CMOS process with a chip area of 426μm×589μm including the test pad.",
keywords = "Broadband impedance transformation, broadside coupled, CMOS, multiple-metal stacked, power amplifier (PA), transmission-line transformer (TLT)",
author = "Chiou, {Hwann Kaeo} and Liao, {Hsein Yuan}",
note = "Funding Information: Manuscript received May 17, 2010; revised June 7, 2010; accepted June 13, 2010. Date of publication July 23, 2010; date of current version August 25, 2010. This work was supported in part by the National Science Council, Taiwan, under Contract NSC 96-2628-E-008-001-MY3 and in part by the Electronics and Optoelectronics Research Laboratories (EOL) of the Industrial Technology Research Institute (ITRI), Taiwan. The review of this letter was arranged by Editor A. Z. Wang.",
year = "2010",
month = sep,
doi = "10.1109/LED.2010.2053693",
language = "???core.languages.en_GB???",
volume = "31",
pages = "921--923",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
number = "9",
}