Broad-band HBT BPSK and IQ modulator MMICs and millimeter-wave vector signal characterization

Hong Yeh Chang; Tian Wei Huang; Huei Wang; Yu Chi Wang; Pane Chane Chao; Chung Hsu Chen

doi:10.1109/TMTT.2004.823573

Broad-band HBT BPSK and IQ modulator MMICs and millimeter-wave vector signal characterization

Hong Yeh Chang
, Tian Wei Huang
, Huei Wang
, Yu Chi Wang
, Pane Chane Chao
, Chung Hsu Chen

電機工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

44 引文斯高帕斯（Scopus）

摘要

Reflection-type binary phase-shift keying and in-phase and quadrature modulator monolithic microwave integrated circuits (MMICs) are reported in this paper. These MMICs are fabricated by 1-μm HBT process and evaluated successfully under vector signal characterization. A cold-mode HBT device model with varying bias conditions is proposed, which is suitable for millimeter-wave circuit design and simulation. The analysis and design equations of imbalance effects for the reflection-type modulators are also presented. These MMICs demonstrate measured error vector magnitude of less than 12%, a carrier rejection of better than 15 dB, and an adjacent channel power ratio of better than -21 dBc from 50 to 110 GHz.

原文	???core.languages.en_GB???
頁（從 - 到）	908-919
頁數	12
期刊	IEEE Transactions on Microwave Theory and Techniques
卷	52
發行號	3
DOIs	https://doi.org/10.1109/TMTT.2004.823573
出版狀態	已出版 - 3月 2004

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10.1109/TMTT.2004.823573

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title = "Broad-band HBT BPSK and IQ modulator MMICs and millimeter-wave vector signal characterization",

abstract = "Reflection-type binary phase-shift keying and in-phase and quadrature modulator monolithic microwave integrated circuits (MMICs) are reported in this paper. These MMICs are fabricated by 1-μm HBT process and evaluated successfully under vector signal characterization. A cold-mode HBT device model with varying bias conditions is proposed, which is suitable for millimeter-wave circuit design and simulation. The analysis and design equations of imbalance effects for the reflection-type modulators are also presented. These MMICs demonstrate measured error vector magnitude of less than 12\%, a carrier rejection of better than 15 dB, and an adjacent channel power ratio of better than -21 dBc from 50 to 110 GHz.",

keywords = "Binary phase-shift keying (BPSK), Cold-mode HBT model, HBT, In-phase and quadrature (IQ), Millimeter wave, Modulator, Monolithic microwave integrated circuit (MMIC)",

author = "Chang, \{Hong Yeh\} and Huang, \{Tian Wei\} and Huei Wang and Wang, \{Yu Chi\} and Chao, \{Pane Chane\} and Chen, \{Chung Hsu\}",

note = "Funding Information: Manuscript received June 23, 2003; revised September 10, 2003. This work was supported in part by the National Science Council under Grant NSC 89-2213-E-002-178 and Grant NSC 90-2219-E-002-007 and by the Research Excellence Program funded by the Department of Education of the Republic of China under Grant ME-89-E-FA06-2-4-6.",

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doi = "10.1109/TMTT.2004.823573",

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T1 - Broad-band HBT BPSK and IQ modulator MMICs and millimeter-wave vector signal characterization

AU - Chang, Hong Yeh

AU - Huang, Tian Wei

AU - Wang, Huei

AU - Wang, Yu Chi

AU - Chao, Pane Chane

AU - Chen, Chung Hsu

N1 - Funding Information: Manuscript received June 23, 2003; revised September 10, 2003. This work was supported in part by the National Science Council under Grant NSC 89-2213-E-002-178 and Grant NSC 90-2219-E-002-007 and by the Research Excellence Program funded by the Department of Education of the Republic of China under Grant ME-89-E-FA06-2-4-6.

PY - 2004/3

Y1 - 2004/3

N2 - Reflection-type binary phase-shift keying and in-phase and quadrature modulator monolithic microwave integrated circuits (MMICs) are reported in this paper. These MMICs are fabricated by 1-μm HBT process and evaluated successfully under vector signal characterization. A cold-mode HBT device model with varying bias conditions is proposed, which is suitable for millimeter-wave circuit design and simulation. The analysis and design equations of imbalance effects for the reflection-type modulators are also presented. These MMICs demonstrate measured error vector magnitude of less than 12%, a carrier rejection of better than 15 dB, and an adjacent channel power ratio of better than -21 dBc from 50 to 110 GHz.

AB - Reflection-type binary phase-shift keying and in-phase and quadrature modulator monolithic microwave integrated circuits (MMICs) are reported in this paper. These MMICs are fabricated by 1-μm HBT process and evaluated successfully under vector signal characterization. A cold-mode HBT device model with varying bias conditions is proposed, which is suitable for millimeter-wave circuit design and simulation. The analysis and design equations of imbalance effects for the reflection-type modulators are also presented. These MMICs demonstrate measured error vector magnitude of less than 12%, a carrier rejection of better than 15 dB, and an adjacent channel power ratio of better than -21 dBc from 50 to 110 GHz.

KW - Binary phase-shift keying (BPSK)

KW - Cold-mode HBT model

KW - HBT

KW - In-phase and quadrature (IQ)

KW - Millimeter wave

KW - Modulator

KW - Monolithic microwave integrated circuit (MMIC)

UR - https://www.scopus.com/pages/publications/1842422883

U2 - 10.1109/TMTT.2004.823573

DO - 10.1109/TMTT.2004.823573

M3 - 期刊論文

AN - SCOPUS:1842422883

SN - 0018-9480

VL - 52

SP - 908

EP - 919

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

IS - 3

ER -

Broad-band HBT BPSK and IQ modulator MMICs and millimeter-wave vector signal characterization

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