Breakdown Behavior of GaAs/AlGaAs HBT's

James J. Chen; Jen Inn Chyi; Hadis Morkoc; Guang Bo Gao

doi:10.1109/16.40896

Breakdown Behavior of GaAs/AlGaAs HBT's

James J. Chen, Jen Inn Chyi, Hadis Morkoc, Guang Bo Gao

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

46 引文斯高帕斯（Scopus）

摘要

Avalanche breakdown behavior at the collector junction of the GaAs/AlGaAs heterojunction bipolar transistor (HBT) has been studied. Junction breakdown characteristics displaying hard break-down, soft breakdown, and negative resistance breakdown behavior were observed and are interpreted by analysis of localized micro-plasma effects, uniform microplasma-free behavior, and associated current gain measurements. Light emission from the collector-base junction of the GaAs/AlGaAs HBT was observed and was used to investigate breakdown uniformity. Using a simple punchthrough break-down model, the theoretical breakdown curves at different collector doping concentrations and thicknesses were computed and found to be in agreement with maximum breakdown voltages measured from de-vices displaying the most uniform junction breakdown.

原文	???core.languages.en_GB???
頁（從 - 到）	2165-2172
頁數	8
期刊	IEEE Transactions on Electron Devices
卷	36
發行號	10
DOIs	https://doi.org/10.1109/16.40896
出版狀態	已出版 - 10月 1989

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title = "Breakdown Behavior of GaAs/AlGaAs HBT's",

abstract = "Avalanche breakdown behavior at the collector junction of the GaAs/AlGaAs heterojunction bipolar transistor (HBT) has been studied. Junction breakdown characteristics displaying hard break-down, soft breakdown, and negative resistance breakdown behavior were observed and are interpreted by analysis of localized micro-plasma effects, uniform microplasma-free behavior, and associated current gain measurements. Light emission from the collector-base junction of the GaAs/AlGaAs HBT was observed and was used to investigate breakdown uniformity. Using a simple punchthrough break-down model, the theoretical breakdown curves at different collector doping concentrations and thicknesses were computed and found to be in agreement with maximum breakdown voltages measured from de-vices displaying the most uniform junction breakdown.",

author = "Chen, {James J.} and Chyi, {Jen Inn} and Hadis Morkoc and Gao, {Guang Bo}",

note = "Funding Information: Manuscript received January 17, 1989; revised April 10, 1989. This work was supported by the Air Force Office of Scientific Research, the Strategic Defense Initiative Office through the Office of Naval Research under Contract N00014-86-05 13, and the National Science Foundation under Contract ECS-88-22406.",

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AU - Chen, James J.

AU - Chyi, Jen Inn

AU - Morkoc, Hadis

AU - Gao, Guang Bo

N1 - Funding Information: Manuscript received January 17, 1989; revised April 10, 1989. This work was supported by the Air Force Office of Scientific Research, the Strategic Defense Initiative Office through the Office of Naval Research under Contract N00014-86-05 13, and the National Science Foundation under Contract ECS-88-22406.

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N2 - Avalanche breakdown behavior at the collector junction of the GaAs/AlGaAs heterojunction bipolar transistor (HBT) has been studied. Junction breakdown characteristics displaying hard break-down, soft breakdown, and negative resistance breakdown behavior were observed and are interpreted by analysis of localized micro-plasma effects, uniform microplasma-free behavior, and associated current gain measurements. Light emission from the collector-base junction of the GaAs/AlGaAs HBT was observed and was used to investigate breakdown uniformity. Using a simple punchthrough break-down model, the theoretical breakdown curves at different collector doping concentrations and thicknesses were computed and found to be in agreement with maximum breakdown voltages measured from de-vices displaying the most uniform junction breakdown.

AB - Avalanche breakdown behavior at the collector junction of the GaAs/AlGaAs heterojunction bipolar transistor (HBT) has been studied. Junction breakdown characteristics displaying hard break-down, soft breakdown, and negative resistance breakdown behavior were observed and are interpreted by analysis of localized micro-plasma effects, uniform microplasma-free behavior, and associated current gain measurements. Light emission from the collector-base junction of the GaAs/AlGaAs HBT was observed and was used to investigate breakdown uniformity. Using a simple punchthrough break-down model, the theoretical breakdown curves at different collector doping concentrations and thicknesses were computed and found to be in agreement with maximum breakdown voltages measured from de-vices displaying the most uniform junction breakdown.

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Breakdown Behavior of GaAs/AlGaAs HBT's

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