Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si

Jui Wei Hus; Chien Chia Chen; Ming Jui Lee; Hsueh Hsing Liu; Jen Inn Chyi; Michael R.S. Huang; Chuan Pu Liu; Tzu Chiao Wei; Jr Hau He; Kun Yu Lai

doi:10.1002/adma.201501538

Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si

Jui Wei Hus
, Chien Chia Chen
, Ming Jui Lee
, Hsueh Hsing Liu
, Jen Inn Chyi
, Michael R.S. Huang
, Chuan Pu Liu
, Tzu Chiao Wei
, Jr Hau He
, Kun Yu Lai

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

10 引文斯高帕斯（Scopus）

摘要

Semipolar {101¯1} InGaN quantum wells are grown on (001) Si substrates with an Al-free buffer and wafer-scale uniformity. The novel structure is achieved by a bottom-up nano-heteroepitaxy employing self-organized ZnO nanorods as the strain-relieving layer. This ZnO nanostructure unlocks the problems encountered by the conventional AlN-based buffer, which grows slowly and contaminates the growth chamber.

原文	???core.languages.en_GB???
頁（從 - 到）	4845-4850
頁數	6
期刊	Advanced Materials
卷	27
發行號	33
DOIs	https://doi.org/10.1002/adma.201501538
出版狀態	已出版 - 1 9月 2015

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10.1002/adma.201501538

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title = "Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si",

abstract = "Semipolar \{101¯1\} InGaN quantum wells are grown on (001) Si substrates with an Al-free buffer and wafer-scale uniformity. The novel structure is achieved by a bottom-up nano-heteroepitaxy employing self-organized ZnO nanorods as the strain-relieving layer. This ZnO nanostructure unlocks the problems encountered by the conventional AlN-based buffer, which grows slowly and contaminates the growth chamber.",

keywords = "GaN, Si substrate, nano-heteroepitaxy, quantum well, semipolar",

author = "Hus, \{Jui Wei\} and Chen, \{Chien Chia\} and Lee, \{Ming Jui\} and Liu, \{Hsueh Hsing\} and Chyi, \{Jen Inn\} and Huang, \{Michael R.S.\} and Liu, \{Chuan Pu\} and Wei, \{Tzu Chiao\} and He, \{Jr Hau\} and Lai, \{Kun Yu\}",

note = "Publisher Copyright: {\textcopyright} 2015 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim.",

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T1 - Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si

AU - Hus, Jui Wei

AU - Chen, Chien Chia

AU - Lee, Ming Jui

AU - Liu, Hsueh Hsing

AU - Chyi, Jen Inn

AU - Huang, Michael R.S.

AU - Liu, Chuan Pu

AU - Wei, Tzu Chiao

AU - He, Jr Hau

AU - Lai, Kun Yu

PY - 2015/9/1

Y1 - 2015/9/1

N2 - Semipolar {101¯1} InGaN quantum wells are grown on (001) Si substrates with an Al-free buffer and wafer-scale uniformity. The novel structure is achieved by a bottom-up nano-heteroepitaxy employing self-organized ZnO nanorods as the strain-relieving layer. This ZnO nanostructure unlocks the problems encountered by the conventional AlN-based buffer, which grows slowly and contaminates the growth chamber.

AB - Semipolar {101¯1} InGaN quantum wells are grown on (001) Si substrates with an Al-free buffer and wafer-scale uniformity. The novel structure is achieved by a bottom-up nano-heteroepitaxy employing self-organized ZnO nanorods as the strain-relieving layer. This ZnO nanostructure unlocks the problems encountered by the conventional AlN-based buffer, which grows slowly and contaminates the growth chamber.

KW - GaN

KW - Si substrate

KW - nano-heteroepitaxy

KW - quantum well

KW - semipolar

UR - https://www.scopus.com/pages/publications/84940707308

U2 - 10.1002/adma.201501538

DO - 10.1002/adma.201501538

M3 - 期刊論文

C2 - 26178685

AN - SCOPUS:84940707308

SN - 0935-9648

VL - 27

SP - 4845

EP - 4850

JO - Advanced Materials

JF - Advanced Materials

IS - 33

ER -

Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si

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