@article{3b7edd12eea3479ea3111cffa8e4793b,
title = "Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si",
abstract = "Semipolar {101¯1} InGaN quantum wells are grown on (001) Si substrates with an Al-free buffer and wafer-scale uniformity. The novel structure is achieved by a bottom-up nano-heteroepitaxy employing self-organized ZnO nanorods as the strain-relieving layer. This ZnO nanostructure unlocks the problems encountered by the conventional AlN-based buffer, which grows slowly and contaminates the growth chamber.",
keywords = "GaN, Si substrate, nano-heteroepitaxy, quantum well, semipolar",
author = "Hus, {Jui Wei} and Chen, {Chien Chia} and Lee, {Ming Jui} and Liu, {Hsueh Hsing} and Chyi, {Jen Inn} and Huang, {Michael R.S.} and Liu, {Chuan Pu} and Wei, {Tzu Chiao} and He, {Jr Hau} and Lai, {Kun Yu}",
note = "Publisher Copyright: {\textcopyright} 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",
year = "2015",
month = sep,
day = "1",
doi = "10.1002/adma.201501538",
language = "???core.languages.en_GB???",
volume = "27",
pages = "4845--4850",
journal = "Advanced Materials",
issn = "0935-9648",
number = "33",
}