Boron mediation on the growth of Ge quantum dots on Si (1 0 0) by ultra high vacuum chemical vapor deposition system

P. S. Chen, Z. Pei, Y. H. Peng, S. W. Lee, M. J. Tsai

研究成果: 雜誌貢獻期刊論文同行評審

22 引文 斯高帕斯(Scopus)

摘要

Self-assembled Ge quantum dots (QDs) with boron mediation are grown on Si (1 0 0) by an industrial hot wall ultra-high-vacuum chemical vapor deposition (UHV/CVD) system with different growth temperatures and dopant gas flow rates. Diborane (B2H6) gas is applied as a surfactant on the Si (1 0 0) prior to the growth of Ge QDs. Small dome and pyramid shaped Ge QDs are observed after boron treatment as compared to the hut shaped Ge cluster without boron pre-treatment at 525 and 550 °C. The Ge QDs have a typical base width and height of about 30 and 6nm, respectively, and the density is about 2.5 × 1010cm-2 for the growth temperature of 525 °C. Through weakening the Si-H bond during the epitaxy growth and changing the stress field on the surface of the Si (1 0 0) buffer, boron mediation can modify the growth mode of Ge QDs. When the growth temperature is low (525-550 °C), the former factor is dominate, as the growth temperature is raised (600 °C), the latter parameter may play an important role on the formation of Ge QDs. Optical transition from Ge QDs is demonstrated from photoluminescence (PL) spectra. Furthermore, multifold Ge/Si layers are also carried out to enhance the PL intensity with first Ge layer treated by B2H6 and avoid the generation of threading dislocations.

原文???core.languages.en_GB???
頁(從 - 到)213-218
頁數6
期刊Materials Science and Engineering B: Solid-State Materials for Advanced Technology
108
發行號3
DOIs
出版狀態已出版 - 15 5月 2004

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