每年專案
摘要
We demonstrate a novel optical phase shifter with a bipolar junction transistor (BJT) type of device structure based on the silicon photonics foundry platform. By operating such a device in saturation mode, we obtain measured output IEC-VEC characteristics very similar to those of an ideal diode, which has a nearly zero turn-on voltage and an extremely small differential resistance. The huge amount of injected current under a small voltage swing (0.1 V) in the operation window makes it possible to obtain significant plasma induced change of the refractive index in the optical waveguide with an extremely small driving-voltage. The device has a small foot-print (500 μm in length), but exhibits small static power consumption for the π phase-shift (Pπ: 4.1 mW), reasonable propagation loss (0.02 dB/μm), small driving-voltage (Vπ: 0.12 V), fast switching time (rise/fall <1.6/1 ns), a residue amplitude modulation (RAM) as small as 0.18 dB, and a very-low power consumption (0.45 mW) during dynamic operation.
原文 | ???core.languages.en_GB??? |
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文章編號 | 8882291 |
期刊 | IEEE Journal on Selected Topics in Quantum Electronics |
卷 | 26 |
發行號 | 2 |
DOIs | |
出版狀態 | 已出版 - 1 3月 2020 |
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前瞻微波光電與矽基光電整合科技應用之研究-子計畫三:用於光子-微波系統並以矽晶光電為平台的光慢波結構之高速調製器和相移器開發(3/3)
Shi, J.-W. (PI)
1/08/19 → 31/07/20
研究計畫: Research
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