BIST-assisted tuning scheme for minimizing io-channel power of TSV-based 3D DRAMs

Yun Chao Yu, Chi Chun Yang, Jin Fu Li, Chih Yen Lo, Chao Hsun Chen, Jenn Shiang Lai, Ding Ming Kwai, Yung Fa Chou, Cheng Wen Wu

研究成果: 書貢獻/報告類型會議論文篇章同行評審

1 引文 斯高帕斯(Scopus)

摘要

Three-dimensional dynamic random access memory (3D DRAM) using through-silicon via (TSV) has been acknowledged as one good approach for overcoming the memory wall. However, the IO-channel power of a TSV-based 3D DRAM represents a significant portion of the 3D DRAM power. In this paper, we propose a built-in self-test (BIST) -assisted tuning scheme to adjust the driving capability of programmable drivers to fit the number of stacked 3D DRAM dies such that the IO-channel power can be minimized. A BIST design supporting specific test patterns and test flow for the driver tuning is proposed as well. Simulation results show that about 6.16×10 - 2 J energy saving can be achieved for a logic-DRAM stack with 150fF/die TSV load under 100s write operations if the proposed BIST-assisted tuning scheme is implemented in the logic die.

原文???core.languages.en_GB???
主出版物標題Proceedings - 23rd Asian Test Symposium, ATS 2014
發行者IEEE Computer Society
頁面1-6
頁數6
ISBN(電子)9781479960309
DOIs
出版狀態已出版 - 7 12月 2014
事件23rd Asian Test Symposium, ATS 2014 - Hangzhou, China
持續時間: 16 11月 201419 11月 2014

出版系列

名字Proceedings of the Asian Test Symposium
ISSN(列印)1081-7735

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???event.eventtypes.event.conference???23rd Asian Test Symposium, ATS 2014
國家/地區China
城市Hangzhou
期間16/11/1419/11/14

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