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Bias dependent nonlinear responses of LTG-GaAs based p-i-n/n-i-n traveling-wave photodetectors under long wavelength excitation
J. W. Shi
, Y. J. Chiu, J. E. Bowers, Y. H. Chen, S. P. Tai, C. K. Sun
電機工程學系
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引文 斯高帕斯(Scopus)
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Keyphrases
Gallium Arsenide
100%
Photocurrent
100%
Bias Dependence
100%
Ni-P
100%
Long Wavelength
100%
Traveling-wave Photodetectors
100%
Nonlinear Response
100%
Nonlinear Behavior
50%
Femtosecond
50%
Communication Systems
50%
Steady State
50%
Transient Response
50%
Impulse Response
50%
High Bias
50%
Carrier Type
50%
State-dependent Impulses
50%
Transitory State
50%
Photomixing
50%
Response States
50%
Microwave Photonics Communications
50%
Single-carrier
50%
Pulse Excitation
50%
Engineering
Gallium Arsenide
100%
Photocurrent
100%
Nonlinear Response
100%
Photometer
100%
Traveling Wave
100%
Nonlinear Behavior
50%
Photonics
50%
Transient Analysis
50%
Communication System
50%
Impulse Response
50%
Physics
Photoelectric Emission
100%
Photometer
100%
Traveling Wave
100%
Steady State
50%
Gallium Arsenide
50%
Microwave Photonics
50%
Transient Response
50%
Chemistry
Photocurrent
100%
Gallium
50%
photonics
50%
Material Science
Gallium Arsenide
100%