Bias-dependent bandwidth of the conductance in the presence of electron-phonon interaction

Ying Tsan Tang; Kao Chin Lin; Der San Chuu

doi:10.1016/j.ssc.2010.01.007

Bias-dependent bandwidth of the conductance in the presence of electron-phonon interaction

Ying Tsan Tang, Kao Chin Lin, Der San Chuu

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研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

摘要

We study the electronic transport in the presence of electron-phonon interaction (EPI) for a molecular electronic device. Instead of mean field approximation (MFA), the related phonon correlation function is conducted with the Langreth theorem (LT). We present formal expressions for the bandwidth of the electron's spectral function in the central region of the devices, such as quantum dot (QD), or single molecular transistor (SMT). Our results show that the out-tunneling rate depends on the energy, bias voltage and the phonon field. Besides, the predicted conductance map, behaving as a function of bias voltage and the gate voltage, gets blurred at the high bias voltage region. These EPI effects are consistent with the experimental observations in the EPI transport experiment.

原文	???core.languages.en_GB???
頁（從 - 到）	799-803
頁數	5
期刊	Solid State Communications
卷	150
發行號	15-16
DOIs	https://doi.org/10.1016/j.ssc.2010.01.007
出版狀態	已出版 - 4月 2010

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10.1016/j.ssc.2010.01.007

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@article{5f247d410045485aa297bdeae87d63e2,

title = "Bias-dependent bandwidth of the conductance in the presence of electron-phonon interaction",

abstract = "We study the electronic transport in the presence of electron-phonon interaction (EPI) for a molecular electronic device. Instead of mean field approximation (MFA), the related phonon correlation function is conducted with the Langreth theorem (LT). We present formal expressions for the bandwidth of the electron's spectral function in the central region of the devices, such as quantum dot (QD), or single molecular transistor (SMT). Our results show that the out-tunneling rate depends on the energy, bias voltage and the phonon field. Besides, the predicted conductance map, behaving as a function of bias voltage and the gate voltage, gets blurred at the high bias voltage region. These EPI effects are consistent with the experimental observations in the EPI transport experiment.",

keywords = "C. Electron-phonon interactions, C. Electronic transport, C. Tunneling",

author = "Tang, {Ying Tsan} and Lin, {Kao Chin} and Chuu, {Der San}",

note = "Funding Information: The authors gratefully appreciate the discussion with Prof. Dr. M. F. Lin and Prof. H. C. Kan, and are thankful for the support of the NSC-DAAD Sandwich Program under the grant number 96-2911-I-009-025-2 and the National Science Council, Taiwan under the grant number NSC 97-2112-M-009 -004.",

year = "2010",

month = apr,

doi = "10.1016/j.ssc.2010.01.007",

language = "???core.languages.en_GB???",

volume = "150",

pages = "799--803",

journal = "Solid State Communications",

issn = "0038-1098",

number = "15-16",

}

TY - JOUR

T1 - Bias-dependent bandwidth of the conductance in the presence of electron-phonon interaction

AU - Tang, Ying Tsan

AU - Lin, Kao Chin

AU - Chuu, Der San

N1 - Funding Information: The authors gratefully appreciate the discussion with Prof. Dr. M. F. Lin and Prof. H. C. Kan, and are thankful for the support of the NSC-DAAD Sandwich Program under the grant number 96-2911-I-009-025-2 and the National Science Council, Taiwan under the grant number NSC 97-2112-M-009 -004.

PY - 2010/4

Y1 - 2010/4

N2 - We study the electronic transport in the presence of electron-phonon interaction (EPI) for a molecular electronic device. Instead of mean field approximation (MFA), the related phonon correlation function is conducted with the Langreth theorem (LT). We present formal expressions for the bandwidth of the electron's spectral function in the central region of the devices, such as quantum dot (QD), or single molecular transistor (SMT). Our results show that the out-tunneling rate depends on the energy, bias voltage and the phonon field. Besides, the predicted conductance map, behaving as a function of bias voltage and the gate voltage, gets blurred at the high bias voltage region. These EPI effects are consistent with the experimental observations in the EPI transport experiment.

AB - We study the electronic transport in the presence of electron-phonon interaction (EPI) for a molecular electronic device. Instead of mean field approximation (MFA), the related phonon correlation function is conducted with the Langreth theorem (LT). We present formal expressions for the bandwidth of the electron's spectral function in the central region of the devices, such as quantum dot (QD), or single molecular transistor (SMT). Our results show that the out-tunneling rate depends on the energy, bias voltage and the phonon field. Besides, the predicted conductance map, behaving as a function of bias voltage and the gate voltage, gets blurred at the high bias voltage region. These EPI effects are consistent with the experimental observations in the EPI transport experiment.

KW - C. Electron-phonon interactions

KW - C. Electronic transport

KW - C. Tunneling

UR - http://www.scopus.com/inward/record.url?scp=77649340435&partnerID=8YFLogxK

U2 - 10.1016/j.ssc.2010.01.007

DO - 10.1016/j.ssc.2010.01.007

M3 - 期刊論文

AN - SCOPUS:77649340435

SN - 0038-1098

VL - 150

SP - 799

EP - 803

JO - Solid State Communications

JF - Solid State Communications

IS - 15-16

ER -

Bias-dependent bandwidth of the conductance in the presence of electron-phonon interaction

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