Bevelled sidewalls formation and its effect on the light output of GaInN MQW LED chips

J. T. Hsu, C. S. Huang, W. Y. Yeh, J. D. Tsay, Y. D. Quo, C. C. Chuo, C. Y. Lin, C. C. Sun, S. M. Pan

研究成果: 雜誌貢獻會議論文同行評審

2 引文 斯高帕斯(Scopus)

摘要

In this research, experiments and optical simulations have been carried out to study the effect of bevelled sidewalk and geometric shapes on the light extraction efficiency of GaN LED chips. Besides the conventional rectangular chips, hexagonal LED chips were experimentally processed for the fist time on a novel island-like GaN substrate. The bevelled sidewalls could be naturally formed on the chips during the growth of GaN islands by HVPE technology. The results of simulations and experiments are consistent with each other, and show that the output power of LED will be improved doubly when the sidewalls were beveled on the chip. The light output from hexagonal LED chips is also proved better than that from conventional rectangular chips.

原文???core.languages.en_GB???
文章編號28
頁(從 - 到)207-213
頁數7
期刊Proceedings of SPIE - The International Society for Optical Engineering
5530
DOIs
出版狀態已出版 - 2004
事件Fourth International Conference on Solid State Lighting - Denver, CO, United States
持續時間: 3 8月 20046 8月 2004

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