Barrier property of a Ta/MnSixOy Layer formed by a ta-mn alloy for a cu interconnect

Cheng Lun Hsin, Kun Yen Lin

研究成果: 雜誌貢獻期刊論文同行評審

5 引文 斯高帕斯(Scopus)

摘要

The advanced back-end module of very-large-scale-integrated-circuits (VLSIs) requires an ultrathin diffusion barrier layer between the Cu interconnect and low-K oxides. In this letter, we investigated the electrical properties of the barrier layer formed by a Ta-Mn alloy. A diffusion barrier layer self-formed at the interface during annealing, and the .Ta/MnSi bilayer structures were investigated by standard microscopy. Black's equation and the measured mean-time-to-failure (MTTF) were used to obtain the reliability characteristics under different temperatures and current densities. The reliability is approximately two times better than that of the conventional TaN/Ta counterpart. The confidence intervals at 95% for each MTTF confirmed the single failure mode, and the electromigration phenomenon was observed to be the failure mechanism. Our results provide evidence that is a promising barrier material for Cu interconnects in VLSIs.

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文章編號7494920
頁(從 - 到)1048-1050
頁數3
期刊IEEE Electron Device Letters
37
發行號8
DOIs
出版狀態已出版 - 8月 2016

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