Bandwidth enhancement phenomenon of a high-speed GaAs-AlGaAs based unitraveling carrier photodiode with an optimally designed absorption layer at an 830 nm wavelength

Jin Wei Shi; Yu Tai Li; Ci Ling Pan; M. L. Lin; Y. S. Wu; W. S. Liu; J. I. Chyi

doi:10.1063/1.2267088

Bandwidth enhancement phenomenon of a high-speed GaAs-AlGaAs based unitraveling carrier photodiode with an optimally designed absorption layer at an 830 nm wavelength

Jin Wei Shi, Yu Tai Li, Ci Ling Pan, M. L. Lin, Y. S. Wu, W. S. Liu, J. I. Chyi

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

15 引文斯高帕斯（Scopus）

摘要

In this letter, the authors introduce a GaAs/AlGaAs based unitraveling carrier photodiode (UTC-PD) for a wavelength of around 830 nm. There is significant bias- and output-current-dependent bandwidth enhancement phenomena observed with this device. According to their microwave and optical-to- electrical measurement results, such distinct phenomena can occur under a much lower current density (0.3 mA/μm² vs 0.05 mA/μm²) than previously reported for InP-InGaAs UTC-PDs. This can be attributed to the self-induced field in the absorption region, made possible due to the optimized p-type doping profile.

原文	???core.languages.en_GB???
文章編號	053512
期刊	Applied Physics Letters
卷	89
發行號	5
DOIs	https://doi.org/10.1063/1.2267088
出版狀態	已出版 - 2006

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10.1063/1.2267088

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abstract = "In this letter, the authors introduce a GaAs/AlGaAs based unitraveling carrier photodiode (UTC-PD) for a wavelength of around 830 nm. There is significant bias- and output-current-dependent bandwidth enhancement phenomena observed with this device. According to their microwave and optical-to- electrical measurement results, such distinct phenomena can occur under a much lower current density (0.3 mA/μm2 vs 0.05 mA/μm2) than previously reported for InP-InGaAs UTC-PDs. This can be attributed to the self-induced field in the absorption region, made possible due to the optimized p-type doping profile.",

author = "Shi, {Jin Wei} and Li, {Yu Tai} and Pan, {Ci Ling} and Lin, {M. L.} and Wu, {Y. S.} and Liu, {W. S.} and Chyi, {J. I.}",

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T1 - Bandwidth enhancement phenomenon of a high-speed GaAs-AlGaAs based unitraveling carrier photodiode with an optimally designed absorption layer at an 830 nm wavelength

AU - Shi, Jin Wei

AU - Li, Yu Tai

AU - Pan, Ci Ling

AU - Lin, M. L.

AU - Wu, Y. S.

AU - Liu, W. S.

AU - Chyi, J. I.

PY - 2006

Y1 - 2006

N2 - In this letter, the authors introduce a GaAs/AlGaAs based unitraveling carrier photodiode (UTC-PD) for a wavelength of around 830 nm. There is significant bias- and output-current-dependent bandwidth enhancement phenomena observed with this device. According to their microwave and optical-to- electrical measurement results, such distinct phenomena can occur under a much lower current density (0.3 mA/μm2 vs 0.05 mA/μm2) than previously reported for InP-InGaAs UTC-PDs. This can be attributed to the self-induced field in the absorption region, made possible due to the optimized p-type doping profile.

AB - In this letter, the authors introduce a GaAs/AlGaAs based unitraveling carrier photodiode (UTC-PD) for a wavelength of around 830 nm. There is significant bias- and output-current-dependent bandwidth enhancement phenomena observed with this device. According to their microwave and optical-to- electrical measurement results, such distinct phenomena can occur under a much lower current density (0.3 mA/μm2 vs 0.05 mA/μm2) than previously reported for InP-InGaAs UTC-PDs. This can be attributed to the self-induced field in the absorption region, made possible due to the optimized p-type doping profile.

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JO - Applied Physics Letters

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Bandwidth enhancement phenomenon of a high-speed GaAs-AlGaAs based unitraveling carrier photodiode with an optimally designed absorption layer at an 830 nm wavelength

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