Bandwidth enhancement in Si photodiode by eliminating slow diffusion photocarriers

W. K. Huang, Y. C. Liu, Y. M. Hsin

研究成果: 雜誌貢獻期刊論文同行評審

19 引文 斯高帕斯(Scopus)

摘要

The body contact in a Si photodiode fabricated by standard CMOS technology is used to eliminate the slow diffusion photogenerated carriers to enhance the response. The proposed photodiode demonstrates significant reduction in the long tail from pulse measurement and consequently shows the electrical bandwidth of 2.8GHz and 5Gbit/s eye diagram.

原文???core.languages.en_GB???
頁(從 - 到)52-53
頁數2
期刊Electronics Letters
44
發行號1
DOIs
出版狀態已出版 - 2008

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