Bandwidth enhancement in Si photodiode by eliminating slow diffusion photocarriers

W. K. Huang; Y. C. Liu; Y. M. Hsin

doi:10.1049/el:20082484

Bandwidth enhancement in Si photodiode by eliminating slow diffusion photocarriers

W. K. Huang, Y. C. Liu, Y. M. Hsin

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

19 引文斯高帕斯（Scopus）

摘要

The body contact in a Si photodiode fabricated by standard CMOS technology is used to eliminate the slow diffusion photogenerated carriers to enhance the response. The proposed photodiode demonstrates significant reduction in the long tail from pulse measurement and consequently shows the electrical bandwidth of 2.8GHz and 5Gbit/s eye diagram.

原文	???core.languages.en_GB???
頁（從 - 到）	52-53
頁數	2
期刊	Electronics Letters
卷	44
發行號	1
DOIs	https://doi.org/10.1049/el:20082484
出版狀態	已出版 - 2008

存取文件

10.1049/el:20082484

引用此

@article{a4e907d1ad4b4e3cbd6e29b17c3169bf,

title = "Bandwidth enhancement in Si photodiode by eliminating slow diffusion photocarriers",

abstract = "The body contact in a Si photodiode fabricated by standard CMOS technology is used to eliminate the slow diffusion photogenerated carriers to enhance the response. The proposed photodiode demonstrates significant reduction in the long tail from pulse measurement and consequently shows the electrical bandwidth of 2.8GHz and 5Gbit/s eye diagram.",

author = "Huang, {W. K.} and Liu, {Y. C.} and Hsin, {Y. M.}",

year = "2008",

doi = "10.1049/el:20082484",

language = "???core.languages.en_GB???",

volume = "44",

pages = "52--53",

journal = "Electronics Letters",

issn = "0013-5194",

number = "1",

}

TY - JOUR

T1 - Bandwidth enhancement in Si photodiode by eliminating slow diffusion photocarriers

AU - Huang, W. K.

AU - Liu, Y. C.

AU - Hsin, Y. M.

PY - 2008

Y1 - 2008

N2 - The body contact in a Si photodiode fabricated by standard CMOS technology is used to eliminate the slow diffusion photogenerated carriers to enhance the response. The proposed photodiode demonstrates significant reduction in the long tail from pulse measurement and consequently shows the electrical bandwidth of 2.8GHz and 5Gbit/s eye diagram.

AB - The body contact in a Si photodiode fabricated by standard CMOS technology is used to eliminate the slow diffusion photogenerated carriers to enhance the response. The proposed photodiode demonstrates significant reduction in the long tail from pulse measurement and consequently shows the electrical bandwidth of 2.8GHz and 5Gbit/s eye diagram.

UR - http://www.scopus.com/inward/record.url?scp=37249046500&partnerID=8YFLogxK

U2 - 10.1049/el:20082484

DO - 10.1049/el:20082484

M3 - 期刊論文

AN - SCOPUS:37249046500

SN - 0013-5194

VL - 44

SP - 52

EP - 53

JO - Electronics Letters

JF - Electronics Letters

IS - 1

ER -

Bandwidth enhancement in Si photodiode by eliminating slow diffusion photocarriers

摘要

存取文件

指紋

引用此