Bandwidth enhancement in an integratable SiGe phototransistor by removal of excess carriers

Z. Pei, J. W. Shi, Y. M. Hsu, F. Yuan, C. S. Liang, S. C. Lu, W. Y. Hsieh, M. J. Tsai, C. W. Liu

研究成果: 雜誌貢獻通訊期刊論文同行評審

34 引文 斯高帕斯(Scopus)

摘要

In this letter, we create a path to remove excess carriers in the base region of a SiGe phototransistor (HPT) by introducing the trap centers. The behavior of the trap centers in the SiGe heterojunction bipolar transistor (HBT) is a form of nonideal (nkT) base current. The responsivity of the device is ∼0.43 A/W with fully SiGe HBT-compatible device structure to facilitate the integration of the following amplification circuitry. The full-width at half-maximum of the pulse is ∼90 ps and the tail of the optical pulse response is largely reduced with the nkT current. By reducing the tail, bandwidth is increased from 1.5 to 3 GHz. This proposes SiGe HPT is applicable for optoelectronic technology.

原文???core.languages.en_GB???
頁(從 - 到)286-288
頁數3
期刊IEEE Electron Device Letters
25
發行號5
DOIs
出版狀態已出版 - 5月 2004

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