Band offsets of ln0.30Ga0.70As/ln0.29AI0.71As heterojunction grown oh GaAs substrate

J. L. Shieh; J. L. Chyi; R. J. Lin; R. M. Lin; J. W. Pan

doi:10.1049/el:19941445

Band offsets of ln^0.30Ga^0.70As/ln^0.29AI^0.71As heterojunction grown oh GaAs substrate

J. L. Shieh, J. L. Chyi, R. J. Lin, R. M. Lin, J. W. Pan

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

11 引文斯高帕斯（Scopus）

摘要

Temperature-dependent current-voltage measurement was employed to study the band offsets of the In^0.30Ga^0.70As/In^0.29Al^0.71As heterojunction. The conduction band discontinuity was determined to be 0.71 ± 0.05 eV which corresponds to a conduction band offset to bandgap difference ratio of ~0.66. The comparison between experimental and theoretical results is presented.

原文	???core.languages.en_GB???
頁（從 - 到）	2172-2173
頁數	2
期刊	Electronics Letters
卷	30
發行號	25
DOIs	https://doi.org/10.1049/el:19941445
出版狀態	已出版 - 24 11月 1994

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10.1049/el:19941445

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title = "Band offsets of ln0.30Ga0.70As/ln0.29AI0.71As heterojunction grown oh GaAs substrate",

abstract = "Temperature-dependent current-voltage measurement was employed to study the band offsets of the In0.30Ga0.70As/In0.29Al0.71As heterojunction. The conduction band discontinuity was determined to be 0.71 ± 0.05 eV which corresponds to a conduction band offset to bandgap difference ratio of ~0.66. The comparison between experimental and theoretical results is presented.",

keywords = "Band structure, Gallium indium arsenide, Semiconductor junctions",

author = "Shieh, {J. L.} and Chyi, {J. L.} and Lin, {R. J.} and Lin, {R. M.} and Pan, {J. W.}",

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T1 - Band offsets of ln0.30Ga0.70As/ln0.29AI0.71As heterojunction grown oh GaAs substrate

AU - Shieh, J. L.

AU - Chyi, J. L.

AU - Lin, R. J.

AU - Lin, R. M.

AU - Pan, J. W.

PY - 1994/11/24

Y1 - 1994/11/24

N2 - Temperature-dependent current-voltage measurement was employed to study the band offsets of the In0.30Ga0.70As/In0.29Al0.71As heterojunction. The conduction band discontinuity was determined to be 0.71 ± 0.05 eV which corresponds to a conduction band offset to bandgap difference ratio of ~0.66. The comparison between experimental and theoretical results is presented.

AB - Temperature-dependent current-voltage measurement was employed to study the band offsets of the In0.30Ga0.70As/In0.29Al0.71As heterojunction. The conduction band discontinuity was determined to be 0.71 ± 0.05 eV which corresponds to a conduction band offset to bandgap difference ratio of ~0.66. The comparison between experimental and theoretical results is presented.

KW - Band structure

KW - Gallium indium arsenide

KW - Semiconductor junctions

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U2 - 10.1049/el:19941445

DO - 10.1049/el:19941445

M3 - 期刊論文

AN - SCOPUS:0028768718

SN - 0013-5194

VL - 30

SP - 2172

EP - 2173

JO - Electronics Letters

JF - Electronics Letters

IS - 25

ER -

Band offsets of ln0.30Ga0.70As/ln0.29AI0.71As heterojunction grown oh GaAs substrate

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Band offsets of ln^0.30Ga^0.70As/ln^0.29AI^0.71As heterojunction grown oh GaAs substrate