摘要
GaAs1-xSbx/GaAs strained-layer multiple quantum wells have been grown by molecular-beam epitaxy and characterized by room-temperature photoreflectance (PR). The PR spectra denote that high-quality layers can be grown in the GaAs1-xSbx/GaAs system. The method for determining the band offset Qvh is discussed in this strained-layer system. Based on this treatment and the band-gap formula of bulk GaAs1-xSbx a value of the heavy-hole band offset (Qvh 1.7) has been obtained for GaAs1-xSbx/GaAs with x=0.1 establishing a type-II structure with electrons in GaAs layers and heavy and light holes in GaAs1-xSbx layers, respectively.
| 原文 | ???core.languages.en_GB??? |
|---|---|
| 頁（從 - 到） | 10571-10577 |
| 頁數 | 7 |
| 期刊 | Physical Review B |
| 卷 | 38 |
| 發行號 | 15 |
| DOIs | |
| 出版狀態 | 已出版 - 1988 |