Band lineup in GaAs1-xSbx/GaAs strained-layer multiple quantum wells grown by molecular-beam epitaxy

G. Ji, S. Agarwala, D. Huang, J. Chyi, H. Morkoç

研究成果: 雜誌貢獻期刊論文同行評審

65 引文 斯高帕斯(Scopus)

摘要

GaAs1-xSbx/GaAs strained-layer multiple quantum wells have been grown by molecular-beam epitaxy and characterized by room-temperature photoreflectance (PR). The PR spectra denote that high-quality layers can be grown in the GaAs1-xSbx/GaAs system. The method for determining the band offset Qvh is discussed in this strained-layer system. Based on this treatment and the band-gap formula of bulk GaAs1-xSbx a value of the heavy-hole band offset (Qvh 1.7) has been obtained for GaAs1-xSbx/GaAs with x=0.1 establishing a type-II structure with electrons in GaAs layers and heavy and light holes in GaAs1-xSbx layers, respectively.

原文???core.languages.en_GB???
頁(從 - 到)10571-10577
頁數7
期刊Physical Review B
38
發行號15
DOIs
出版狀態已出版 - 1988

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