Back-fill Sn flux against current-stressing at cathode micro Cu/Sn interface

C. Y. Liu; Y. C. Hsu; Y. J. Hu; T. S. Huang; C. T. Lu; A. T. Wu

doi:10.1149/2.004402ssl

Back-fill Sn flux against current-stressing at cathode micro Cu/Sn interface

C. Y. Liu, Y. C. Hsu, Y. J. Hu, T. S. Huang, C. T. Lu, A. T. Wu

化學工程與材料工程學系

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

2 引文斯高帕斯（Scopus）

摘要

A back-fill Sn flow is reported against the current-stressing at Sn/Cu micro-joint interface. Upon current-stressing, as the cathode Cu ₆Sn₅ compound is dissolving into adjacent Sn solder matrix, Cu in the dissolving Cu₆Sn₅ compound region would be highlydepleted, which would likely transform to highly-vacant Sn grains. Thus, a large Sn concentration gradient would be established between the highly-vacant Sn grains (dissolving Cu₆Sn₅ compound) and the Sn solder matrix, which causes Sn atoms diffusing into the newly-formed Sn grains. The driving force of the back-fill Sn flow was evaluated and, indeed, it can overcome the electromigration force.

原文	???core.languages.en_GB???
頁（從 - 到）	P17-P19
期刊	ECS Solid State Letters
卷	3
發行號	2
DOIs	https://doi.org/10.1149/2.004402ssl
出版狀態	已出版 - 2014

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10.1149/2.004402ssl

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title = "Back-fill Sn flux against current-stressing at cathode micro Cu/Sn interface",

abstract = "A back-fill Sn flow is reported against the current-stressing at Sn/Cu micro-joint interface. Upon current-stressing, as the cathode Cu 6Sn5 compound is dissolving into adjacent Sn solder matrix, Cu in the dissolving Cu6Sn5 compound region would be highlydepleted, which would likely transform to highly-vacant Sn grains. Thus, a large Sn concentration gradient would be established between the highly-vacant Sn grains (dissolving Cu6Sn5 compound) and the Sn solder matrix, which causes Sn atoms diffusing into the newly-formed Sn grains. The driving force of the back-fill Sn flow was evaluated and, indeed, it can overcome the electromigration force.",

author = "Liu, {C. Y.} and Hsu, {Y. C.} and Hu, {Y. J.} and Huang, {T. S.} and Lu, {C. T.} and Wu, {A. T.}",

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T1 - Back-fill Sn flux against current-stressing at cathode micro Cu/Sn interface

AU - Liu, C. Y.

AU - Hsu, Y. C.

AU - Hu, Y. J.

AU - Huang, T. S.

AU - Lu, C. T.

AU - Wu, A. T.

PY - 2014

Y1 - 2014

N2 - A back-fill Sn flow is reported against the current-stressing at Sn/Cu micro-joint interface. Upon current-stressing, as the cathode Cu 6Sn5 compound is dissolving into adjacent Sn solder matrix, Cu in the dissolving Cu6Sn5 compound region would be highlydepleted, which would likely transform to highly-vacant Sn grains. Thus, a large Sn concentration gradient would be established between the highly-vacant Sn grains (dissolving Cu6Sn5 compound) and the Sn solder matrix, which causes Sn atoms diffusing into the newly-formed Sn grains. The driving force of the back-fill Sn flow was evaluated and, indeed, it can overcome the electromigration force.

AB - A back-fill Sn flow is reported against the current-stressing at Sn/Cu micro-joint interface. Upon current-stressing, as the cathode Cu 6Sn5 compound is dissolving into adjacent Sn solder matrix, Cu in the dissolving Cu6Sn5 compound region would be highlydepleted, which would likely transform to highly-vacant Sn grains. Thus, a large Sn concentration gradient would be established between the highly-vacant Sn grains (dissolving Cu6Sn5 compound) and the Sn solder matrix, which causes Sn atoms diffusing into the newly-formed Sn grains. The driving force of the back-fill Sn flow was evaluated and, indeed, it can overcome the electromigration force.

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Back-fill Sn flux against current-stressing at cathode micro Cu/Sn interface

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