Back-end-of-line defect analysis for Rnv8T nonvolatile SRAM

Bing Chuan Bai, Kun Lun Luo, Chen An Chen, Yee Wen Chen, Ming Hsueh Wu, Chun Lung Hsu, Liang Chia Cheng, James C.M. Li

研究成果: 雜誌貢獻會議論文同行評審

2 引文 斯高帕斯(Scopus)


Rnv8T nonvolatile SRAM combines conventional SRAM and resistive RAM to provide both fast access speed and data retention. Traditional test methods for conventional SRAM or resistive RAM are not suitable for nonvolatile SRAM. This paper analyzes the defective behavior of the Rnv8T nonvolatile SRAM based on defect injection and simulation. Simulation results showed that the inject defects caused stuck-at faults and transition faults which escaped from conventional March tests. Based-on the defective behavior and circuit operations, a straight forward test algorithm is proposed to detect the escaped faults.

頁(從 - 到)123-127
期刊Proceedings of the Asian Test Symposium
出版狀態已出版 - 2013
事件2013 22nd Asian Test Symposium, ATS 2013 - Yilan, Taiwan
持續時間: 18 11月 201321 11月 2013


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