Auto-correlation function analysis of crystallization in amorphous SiGe thin films

T. F. Chiang; W. W. Wu; S. L. Cheng; H. H. Lin; S. W. Lee; L. J. Chen

doi:10.1016/S0169-4332(03)00098-9

Auto-correlation function analysis of crystallization in amorphous SiGe thin films

T. F. Chiang, W. W. Wu, S. L. Cheng, H. H. Lin, S. W. Lee, L. J. Chen

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

4 引文斯高帕斯（Scopus）

摘要

The existence of medium-range ordering structures or nanocrystallites in as-deposited amorphous SiGe thin films has been demonstrated by high-resolution transmission electron microscopy in conjunction with auto-correlation function analysis. The density of nanocrystallites decreases in amorphous SiGe samples annealed at 300-350 °C then increases in samples annealed at 400-450 °C with annealing temperature. The observations can be interpreted in terms of free energy change with annealing temperature.

原文	???core.languages.en_GB???
頁（從 - 到）	339-343
頁數	5
期刊	Applied Surface Science
卷	212-213
發行號	SPEC.
DOIs	https://doi.org/10.1016/S0169-4332(03)00098-9
出版狀態	已出版 - 15 5月 2003

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10.1016/S0169-4332(03)00098-9

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title = "Auto-correlation function analysis of crystallization in amorphous SiGe thin films",

abstract = "The existence of medium-range ordering structures or nanocrystallites in as-deposited amorphous SiGe thin films has been demonstrated by high-resolution transmission electron microscopy in conjunction with auto-correlation function analysis. The density of nanocrystallites decreases in amorphous SiGe samples annealed at 300-350 °C then increases in samples annealed at 400-450 °C with annealing temperature. The observations can be interpreted in terms of free energy change with annealing temperature.",

keywords = "Amorphous, Auto-correlation function, Crystallization, Si, SiGe",

author = "Chiang, {T. F.} and Wu, {W. W.} and Cheng, {S. L.} and Lin, {H. H.} and Lee, {S. W.} and Chen, {L. J.}",

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T1 - Auto-correlation function analysis of crystallization in amorphous SiGe thin films

AU - Chiang, T. F.

AU - Wu, W. W.

AU - Cheng, S. L.

AU - Lin, H. H.

AU - Lee, S. W.

AU - Chen, L. J.

PY - 2003/5/15

Y1 - 2003/5/15

N2 - The existence of medium-range ordering structures or nanocrystallites in as-deposited amorphous SiGe thin films has been demonstrated by high-resolution transmission electron microscopy in conjunction with auto-correlation function analysis. The density of nanocrystallites decreases in amorphous SiGe samples annealed at 300-350 °C then increases in samples annealed at 400-450 °C with annealing temperature. The observations can be interpreted in terms of free energy change with annealing temperature.

AB - The existence of medium-range ordering structures or nanocrystallites in as-deposited amorphous SiGe thin films has been demonstrated by high-resolution transmission electron microscopy in conjunction with auto-correlation function analysis. The density of nanocrystallites decreases in amorphous SiGe samples annealed at 300-350 °C then increases in samples annealed at 400-450 °C with annealing temperature. The observations can be interpreted in terms of free energy change with annealing temperature.

KW - Amorphous

KW - Auto-correlation function

KW - Crystallization

KW - Si

KW - SiGe

UR - http://www.scopus.com/inward/record.url?scp=0038241601&partnerID=8YFLogxK

U2 - 10.1016/S0169-4332(03)00098-9

DO - 10.1016/S0169-4332(03)00098-9

M3 - 期刊論文

AN - SCOPUS:0038241601

SN - 0169-4332

VL - 212-213

SP - 339

EP - 343

JO - Applied Surface Science

JF - Applied Surface Science

IS - SPEC.

ER -

Auto-correlation function analysis of crystallization in amorphous SiGe thin films

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