Array of GaN-based transverse-junction blue light emitting diodes with regrown n-type regimes

In this research, we demonstrate array of transverse-junction (TJ) blue light-emitting-diodes (LEDs), which are specified as a horizontal carrier flow instead of side-by-side injection, with a consequence of In_xGa _1-xN/GaN multiple-quantum-wells (MQWs) as the active region. The demonstrated devices were carried out by the re-growth of n-type GaN on the sidewall of p-type GaN. Regarding the transverse carrier flow of injected carriers, these TJ-LEDs, as compared to the control related to traditional vertical junction structure, can effectively spread injected currents more uniformly, minimize the problem of nonuniform carrier-distribution and current crowding effect, and achieve 35% improvement of power performance.