Annealing effects on the interfacial properties of GaN MOS prepared by photo-enhanced wet oxidation

H. M. Wu; J. Y. Lin; L. H. Peng; C. M. Lee; J. I. Chyi; E. Chen

doi:10.1109/ISDRS.2003.1272156

Annealing effects on the interfacial properties of GaN MOS prepared by photo-enhanced wet oxidation

H. M. Wu, J. Y. Lin, L. H. Peng, C. M. Lee, J. I. Chyi, E. Chen

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

摘要

We investigate the annealing effects on the interfacial properties of gallium oxide (Ga₂O₃) grown on gallium nitride (GaN) by the photo-enhanced wet oxidation technique. The depth profile resolved XPS analysis indicates an interfacial layer as thin as 20nm can be maintained at the Ga20JGaN interface when subject to a rapid thermal annealing in an oxygen ambient at 800°C. Our I-V and C-V analysis on the MOS device reveals a low interfacial density of state 5 × 10¹⁰ cm-2ev-1 and high breakdown field above 3MV/cm. These results suggest the photo-grown Ga₂O₃ with post 01 annealing is suitable for power device application.

原文	???core.languages.en_GB???
主出版物標題	2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	406-407
頁數	2
ISBN（電子）	0780381394, 9780780381391
DOIs	https://doi.org/10.1109/ISDRS.2003.1272156
出版狀態	已出版 - 2003
事件	International Semiconductor Device Research Symposium, ISDRS 2003 - Washington, United States 持續時間: 10 12月 2003 → 12 12月 2003

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名字	2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

???event.eventtypes.event.conference???

???event.eventtypes.event.conference???	International Semiconductor Device Research Symposium, ISDRS 2003
國家/地區	United States
城市	Washington
期間	10/12/03 → 12/12/03

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10.1109/ISDRS.2003.1272156

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Wu, H. M., Lin, J. Y., Peng, L. H., Lee, C. M., Chyi, J. I., & Chen, E. (2003). Annealing effects on the interfacial properties of GaN MOS prepared by photo-enhanced wet oxidation. 於 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings (頁 406-407). 文章 1272156 (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISDRS.2003.1272156

Wu, H. M. ; Lin, J. Y. ; Peng, L. H. 等. / Annealing effects on the interfacial properties of GaN MOS prepared by photo-enhanced wet oxidation. 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. 頁 406-407 (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings).

@inproceedings{7ce83cde8eb5494bb3ef7a422f501a4b,

title = "Annealing effects on the interfacial properties of GaN MOS prepared by photo-enhanced wet oxidation",

abstract = "We investigate the annealing effects on the interfacial properties of gallium oxide (Ga2O3) grown on gallium nitride (GaN) by the photo-enhanced wet oxidation technique. The depth profile resolved XPS analysis indicates an interfacial layer as thin as 20nm can be maintained at the Ga20JGaN interface when subject to a rapid thermal annealing in an oxygen ambient at 800°C. Our I-V and C-V analysis on the MOS device reveals a low interfacial density of state 5 × 1010 cm-2ev-1 and high breakdown field above 3MV/cm. These results suggest the photo-grown Ga2O3 with post 01 annealing is suitable for power device application.",

author = "Wu, \{H. M.\} and Lin, \{J. Y.\} and Peng, \{L. H.\} and Lee, \{C. M.\} and Chyi, \{J. I.\} and E. Chen",

year = "2003",

doi = "10.1109/ISDRS.2003.1272156",

language = "???core.languages.en\_GB???",

series = "2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "406--407",

booktitle = "2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings",

note = "International Semiconductor Device Research Symposium, ISDRS 2003 ; Conference date: 10-12-2003 Through 12-12-2003",

}

Wu, HM, Lin, JY, Peng, LH, Lee, CM, Chyi, JI & Chen, E 2003, Annealing effects on the interfacial properties of GaN MOS prepared by photo-enhanced wet oxidation. 於 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings., 1272156, 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 頁 406-407, International Semiconductor Device Research Symposium, ISDRS 2003, Washington, United States, 10/12/03. https://doi.org/10.1109/ISDRS.2003.1272156

Annealing effects on the interfacial properties of GaN MOS prepared by photo-enhanced wet oxidation. / Wu, H. M.; Lin, J. Y.; Peng, L. H. 等.
2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. p. 406-407 1272156 (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings).

研究成果: 書貢獻/報告類型 › 會議論文篇章 › 同行評審

TY - GEN

T1 - Annealing effects on the interfacial properties of GaN MOS prepared by photo-enhanced wet oxidation

AU - Wu, H. M.

AU - Lin, J. Y.

AU - Peng, L. H.

AU - Lee, C. M.

AU - Chyi, J. I.

AU - Chen, E.

PY - 2003

Y1 - 2003

N2 - We investigate the annealing effects on the interfacial properties of gallium oxide (Ga2O3) grown on gallium nitride (GaN) by the photo-enhanced wet oxidation technique. The depth profile resolved XPS analysis indicates an interfacial layer as thin as 20nm can be maintained at the Ga20JGaN interface when subject to a rapid thermal annealing in an oxygen ambient at 800°C. Our I-V and C-V analysis on the MOS device reveals a low interfacial density of state 5 × 1010 cm-2ev-1 and high breakdown field above 3MV/cm. These results suggest the photo-grown Ga2O3 with post 01 annealing is suitable for power device application.

AB - We investigate the annealing effects on the interfacial properties of gallium oxide (Ga2O3) grown on gallium nitride (GaN) by the photo-enhanced wet oxidation technique. The depth profile resolved XPS analysis indicates an interfacial layer as thin as 20nm can be maintained at the Ga20JGaN interface when subject to a rapid thermal annealing in an oxygen ambient at 800°C. Our I-V and C-V analysis on the MOS device reveals a low interfacial density of state 5 × 1010 cm-2ev-1 and high breakdown field above 3MV/cm. These results suggest the photo-grown Ga2O3 with post 01 annealing is suitable for power device application.

UR - https://www.scopus.com/pages/publications/84945278485

U2 - 10.1109/ISDRS.2003.1272156

DO - 10.1109/ISDRS.2003.1272156

M3 - 會議論文篇章

AN - SCOPUS:84945278485

T3 - 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

SP - 406

EP - 407

BT - 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - International Semiconductor Device Research Symposium, ISDRS 2003

Y2 - 10 December 2003 through 12 December 2003

ER -

Wu HM, Lin JY, Peng LH, Lee CM, Chyi JI, Chen E. Annealing effects on the interfacial properties of GaN MOS prepared by photo-enhanced wet oxidation. 於 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2003. p. 406-407. 1272156. (2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings). doi: 10.1109/ISDRS.2003.1272156

Annealing effects on the interfacial properties of GaN MOS prepared by photo-enhanced wet oxidation

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