TY - JOUR
T1 - Analytical modeling of a high-performance near-ballistic uni-traveling-carrier photodiode at a 1.55-μm wavelength
AU - Wu, Y. S.
AU - Shi, J. W.
AU - Chiu, P. H.
N1 - Funding Information:
Manuscript received November 3, 2005; revised January 10, 2006. This work was supported by the National Science Council of Taiwan under Grant NSC-95-2215-E-008-003. The authors are with the Department of Electrical Engineering, National Central University, Taoyuan 320, Taiwan, R.O.C. (e-mail: [email protected]). Digital Object Identifier 10.1109/LPT.2006.873567 Fig. 1. Electrical bandwidth versus photocurrent under different bias voltages of the device with a 320-m active area (closed square: 1 V; open circle: 2 V; closed triangle: 3 V; open triangle: 5 V).
PY - 2006/4/15
Y1 - 2006/4/15
N2 - In this letter, we developed an analytical equivalent circuit model, which includes the resistance-capacitance-delay time and carrier transport time, to investigate the distinct dynamic performance of the near-ballistic uni-traveling-carrier photodiode (NBUTC-PD). This device, in which the structure of the collector of the UTC-PD is modified, can achieve excellent performance at a 1.55-μm wavelength. According to the measured frequency responses of the scattering (S) parameters of NBUTC-PD and detailed device-modeling, the observed significant reduction of the device capacitance and the enhancement of the net optical-to-electrical bandwidth under high-power operation can be attributed to the unique near-ballistic-transport property of the photogenerated electron, which has never been observed in the traditional high-speed high-power photodiode.
AB - In this letter, we developed an analytical equivalent circuit model, which includes the resistance-capacitance-delay time and carrier transport time, to investigate the distinct dynamic performance of the near-ballistic uni-traveling-carrier photodiode (NBUTC-PD). This device, in which the structure of the collector of the UTC-PD is modified, can achieve excellent performance at a 1.55-μm wavelength. According to the measured frequency responses of the scattering (S) parameters of NBUTC-PD and detailed device-modeling, the observed significant reduction of the device capacitance and the enhancement of the net optical-to-electrical bandwidth under high-power operation can be attributed to the unique near-ballistic-transport property of the photogenerated electron, which has never been observed in the traditional high-speed high-power photodiode.
KW - Equivalent-circuit model
KW - High-power photodiode
KW - Optical receivers
KW - Photodiode
UR - http://www.scopus.com/inward/record.url?scp=33645824109&partnerID=8YFLogxK
U2 - 10.1109/LPT.2006.873567
DO - 10.1109/LPT.2006.873567
M3 - 期刊論文
AN - SCOPUS:33645824109
SN - 1041-1135
VL - 18
SP - 938
EP - 940
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
IS - 8
ER -