@article{5fe3735a88cd4e8fad37632f552e6b2f,
title = "Analytical modeling of a high-performance near-ballistic uni-traveling-carrier photodiode at a 1.55-μm wavelength",
abstract = "In this letter, we developed an analytical equivalent circuit model, which includes the resistance-capacitance-delay time and carrier transport time, to investigate the distinct dynamic performance of the near-ballistic uni-traveling-carrier photodiode (NBUTC-PD). This device, in which the structure of the collector of the UTC-PD is modified, can achieve excellent performance at a 1.55-μm wavelength. According to the measured frequency responses of the scattering (S) parameters of NBUTC-PD and detailed device-modeling, the observed significant reduction of the device capacitance and the enhancement of the net optical-to-electrical bandwidth under high-power operation can be attributed to the unique near-ballistic-transport property of the photogenerated electron, which has never been observed in the traditional high-speed high-power photodiode.",
keywords = "Equivalent-circuit model, High-power photodiode, Optical receivers, Photodiode",
author = "Wu, {Y. S.} and Shi, {J. W.} and Chiu, {P. H.}",
note = "Funding Information: Manuscript received November 3, 2005; revised January 10, 2006. This work was supported by the National Science Council of Taiwan under Grant NSC-95-2215-E-008-003. The authors are with the Department of Electrical Engineering, National Central University, Taoyuan 320, Taiwan, R.O.C. (e-mail: jwshi@ee.ncu.edu.tw). Digital Object Identifier 10.1109/LPT.2006.873567 Fig. 1. Electrical bandwidth versus photocurrent under different bias voltages of the device with a 320-m active area (closed square: 1 V; open circle: 2 V; closed triangle: 3 V; open triangle: 5 V).",
year = "2006",
month = apr,
day = "15",
doi = "10.1109/LPT.2006.873567",
language = "???core.languages.en_GB???",
volume = "18",
pages = "938--940",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
number = "8",
}