TY - JOUR
T1 - Analysis of the temperature dependence of 1.3 μm AlGaInAs/InP multiple quantum-well lasers
AU - Pan, Jen Wei
AU - Chyi, Jen Inn
PY - 1996
Y1 - 1996
N2 - The temperature dependence of the differential gain, carrier density, and threshold current density for 1.3 μm AlGaInAs/InP multiple quantum-well lasers has been theoretically studied using the optical gain calculation from 250 K to 380 K. The Auger current accounts for more than 50% of the total current. The leakage current exhibits the highest temperature sensitivity and becomes an essential part of the total current at high temperature. The calculated characteristic temperatures of the transparency and threshold current densities are 106 K and 84 K, respectively, which agree well with the reported experimental results.
AB - The temperature dependence of the differential gain, carrier density, and threshold current density for 1.3 μm AlGaInAs/InP multiple quantum-well lasers has been theoretically studied using the optical gain calculation from 250 K to 380 K. The Auger current accounts for more than 50% of the total current. The leakage current exhibits the highest temperature sensitivity and becomes an essential part of the total current at high temperature. The calculated characteristic temperatures of the transparency and threshold current densities are 106 K and 84 K, respectively, which agree well with the reported experimental results.
UR - http://www.scopus.com/inward/record.url?scp=0029701138&partnerID=8YFLogxK
M3 - 會議論文
AN - SCOPUS:0029701138
SN - 1092-8669
SP - 188
EP - 191
JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
T2 - Proceedings of the 1996 8th International Conference on Indium Phosphide and Related Materials
Y2 - 21 April 1996 through 25 April 1996
ER -