Analysis of the temperature dependence of 1.3 μm AlGaInAs/InP multiple quantum-well lasers

Jen Wei Pan, Jen Inn Chyi

研究成果: 雜誌貢獻會議論文同行評審

2 引文 斯高帕斯(Scopus)

摘要

The temperature dependence of the differential gain, carrier density, and threshold current density for 1.3 μm AlGaInAs/InP multiple quantum-well lasers has been theoretically studied using the optical gain calculation from 250 K to 380 K. The Auger current accounts for more than 50% of the total current. The leakage current exhibits the highest temperature sensitivity and becomes an essential part of the total current at high temperature. The calculated characteristic temperatures of the transparency and threshold current densities are 106 K and 84 K, respectively, which agree well with the reported experimental results.

原文???core.languages.en_GB???
頁(從 - 到)188-191
頁數4
期刊Conference Proceedings - International Conference on Indium Phosphide and Related Materials
出版狀態已出版 - 1996
事件Proceedings of the 1996 8th International Conference on Indium Phosphide and Related Materials - Schwabisch Gmund, Ger
持續時間: 21 4月 199625 4月 1996

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