摘要
The light extraction efficiency of GaN-based LEDs as a function of the position of the light source over the active layer is studied. Several parameters, including chip dimensions, absorption coefficients and package are analyzed on the basis of a Monte-Carlo ray tracing simulation. The light extraction efficiency of a Thin-GaN LED is studied with respect to a sapphire-based LED, including the surface texture.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 4175-4179 |
頁數 | 5 |
期刊 | Optics Express |
卷 | 13 |
發行號 | 11 |
DOIs | |
出版狀態 | 已出版 - 30 5月 2005 |