An Ultra-compact 14.9-W X-Band GaN MMIC Power Amplifier

Li Hsien Huang, Hwann Kaeo Chiou

研究成果: 書貢獻/報告類型會議論文篇章同行評審

4 引文 斯高帕斯(Scopus)

摘要

This paper presents an ultra-compact 14.9 W X-band GaN power amplifier (PA) which is designed by using WIN^{TM}0.25-\mum GaN-on-SiC HEMT technology. To design the compact PA, a simple four-way power combining structure is used to obtain high output power per area ratio. The pulsed mode measurements demonstrate a saturated output power of 14.9 W and maximal power added efficiency (PAE) of 37% in a chip area of 2.1\times 1.65mm^{2}. The proposed PA achieves a power per area ratio of 4.3 W/mm^{2} which is the best Figure of merit (FoM) among recently designed X-band GaN PA monolithic microwave integrated circuits (MMICs).

原文???core.languages.en_GB???
主出版物標題2020 Asia-Pacific Microwave Conference, APMC 2020 - Proceeding
編輯Jie Sun, Wai Ho Yu
發行者Institute of Electrical and Electronics Engineers Inc.
頁面257-259
頁數3
ISBN(電子)9781728169620
DOIs
出版狀態已出版 - 8 12月 2020
事件2020 Asia-Pacific Microwave Conference, APMC 2020 - Virtual, Hong Kong, Hong Kong
持續時間: 8 12月 202011 12月 2020

出版系列

名字Asia-Pacific Microwave Conference Proceedings, APMC
2020-December

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???event.eventtypes.event.conference???2020 Asia-Pacific Microwave Conference, APMC 2020
國家/地區Hong Kong
城市Virtual, Hong Kong
期間8/12/2011/12/20

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