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摘要
This paper presents an ultra-compact 14.9 W X-band GaN power amplifier (PA) which is designed by using WIN^{TM}0.25-\mum GaN-on-SiC HEMT technology. To design the compact PA, a simple four-way power combining structure is used to obtain high output power per area ratio. The pulsed mode measurements demonstrate a saturated output power of 14.9 W and maximal power added efficiency (PAE) of 37% in a chip area of 2.1\times 1.65mm^{2}. The proposed PA achieves a power per area ratio of 4.3 W/mm^{2} which is the best Figure of merit (FoM) among recently designed X-band GaN PA monolithic microwave integrated circuits (MMICs).
原文 | ???core.languages.en_GB??? |
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主出版物標題 | 2020 Asia-Pacific Microwave Conference, APMC 2020 - Proceeding |
編輯 | Jie Sun, Wai Ho Yu |
發行者 | Institute of Electrical and Electronics Engineers Inc. |
頁面 | 257-259 |
頁數 | 3 |
ISBN(電子) | 9781728169620 |
DOIs | |
出版狀態 | 已出版 - 8 12月 2020 |
事件 | 2020 Asia-Pacific Microwave Conference, APMC 2020 - Virtual, Hong Kong, Hong Kong 持續時間: 8 12月 2020 → 11 12月 2020 |
出版系列
名字 | Asia-Pacific Microwave Conference Proceedings, APMC |
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卷 | 2020-December |
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???event.eventtypes.event.conference??? | 2020 Asia-Pacific Microwave Conference, APMC 2020 |
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國家/地區 | Hong Kong |
城市 | Virtual, Hong Kong |
期間 | 8/12/20 → 11/12/20 |
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