An Isolation-Improved Asymmetric T/R Switch with Two-Stage Networks in GaAs pHEMT for 5G NR FR2 n259 Band

研究成果: 書貢獻/報告類型會議論文篇章同行評審

2 引文 斯高帕斯(Scopus)

摘要

The isolation of conventional asymmetric T/R switches is usually low, especially in the RX mode. To improve the isolation, an asymmetric T/R switch with two-stage networks used for both its TX and RX arms is proposed. The proposed T/R switch is designed for 5G NR FR2 n259 band and fabricated using WIN 0.15-μm GaAs pHEMT process. From 39.5 to 43.5 GHz, the measured TX-to-RX isolation is higher than 20.1 dB and 36.9 dB for the RX and TX modes, respectively.

原文???core.languages.en_GB???
主出版物標題GCCE 2023 - 2023 IEEE 12th Global Conference on Consumer Electronics
發行者Institute of Electrical and Electronics Engineers Inc.
頁面808-809
頁數2
ISBN(電子)9798350340181
DOIs
出版狀態已出版 - 2023
事件12th IEEE Global Conference on Consumer Electronics, GCCE 2023 - Nara, Japan
持續時間: 10 10月 202313 10月 2023

出版系列

名字GCCE 2023 - 2023 IEEE 12th Global Conference on Consumer Electronics

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???event.eventtypes.event.conference???12th IEEE Global Conference on Consumer Electronics, GCCE 2023
國家/地區Japan
城市Nara
期間10/10/2313/10/23

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