@inproceedings{cfaac4d702dd4799a274b8ea4b248779,
title = "An integrated dual-band SiGe HBT low noise amplifier",
abstract = "A common-base cascade dual-hand low noise amplifier (LNA) for 2.4 and 5.8 GHz is presented in this paper. The LNA design is based on SiGe HBT (TSMC 0.35(on BiCMOS) technology. At 2.4 GHz, the LNA performs a noise figure of 4.3 dB, associated gain of 11.1 dB, IIP3 of -4.4 dBm, and OIP3 of 5.3 dBm. At 5.8 GHz, the LNA performs a noise figure of 5.4 dB, associated gain of 5.11 dB, IIP3 of 3.7 dBm, and OIP3 of 7.3 dBm. The dc power consumption is 8.4 mW and the chip size Is 0.86 × 0.58 mm2.",
keywords = "Dual-band, HBT, LNA, Low noise amplifier",
author = "Huang, {Chen Yang} and Hsin, {Yue Ming}",
year = "2005",
doi = "10.1109/RFIT.2005.1598907",
language = "???core.languages.en_GB???",
isbn = "0780393724",
series = "Proceedings - 2005 IEEE International Workshop on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Communication and Wireless Sensor Networks, RFIT 2005",
pages = "187--190",
booktitle = "Proceedings - 2005 IEEE International Workshop on Radio-Frequency Integration Technology",
note = "2005 IEEE International Workshop on Radio-Frequency Integration Technology: Integrated Circuits for Wideband Communication and Wireless Sensor Networks, RFIT 2005 ; Conference date: 30-11-2005 Through 02-12-2005",
}