An InP/InGaAs/InP DHBT with high power density at Ka-band

Che ming Wang, Shou Chien Huang, Wei Kuo Huang, Yue ming Hsin

研究成果: 雜誌貢獻期刊論文同行評審

1 引文 斯高帕斯(Scopus)

摘要

An InP/InGaAs/InP double heterojunction bipolar transistor was fabricated and its Ka-band power performance characterized. The device employed a 30 nm highly doped InGaAs base, and a 150 nm collector with an InAlGaAs linearly graded at the base-collector junction to prevent current blocking and maintain breakdown voltage. The dc current gain is 28.4 at a current density of JC = 666 kA/cm2 and the breakdown voltage (BVCEO) is larger than 5 V. A submicrometer InP/InGaAs DHBT with an emitter size of 0.6 × 12 μm2 demonstrated a maximum cutoff frequency (fT) of 230 GHz, and a maximum output power density of 3.7 mW/μm2 at 29 GHz.

原文???core.languages.en_GB???
頁(從 - 到)49-52
頁數4
期刊Solid-State Electronics
52
發行號1
DOIs
出版狀態已出版 - 1月 2008

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