An InP/InGaAs/InP DHBT with high power density at Ka-band

Che ming Wang; Shou Chien Huang; Wei Kuo Huang; Yue ming Hsin

doi:10.1016/j.sse.2007.06.009

An InP/InGaAs/InP DHBT with high power density at Ka-band

Che ming Wang, Shou Chien Huang, Wei Kuo Huang, Yue ming Hsin

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

1 引文斯高帕斯（Scopus）

摘要

An InP/InGaAs/InP double heterojunction bipolar transistor was fabricated and its Ka-band power performance characterized. The device employed a 30 nm highly doped InGaAs base, and a 150 nm collector with an InAlGaAs linearly graded at the base-collector junction to prevent current blocking and maintain breakdown voltage. The dc current gain is 28.4 at a current density of J_C = 666 kA/cm² and the breakdown voltage (BV_CEO) is larger than 5 V. A submicrometer InP/InGaAs DHBT with an emitter size of 0.6 × 12 μm² demonstrated a maximum cutoff frequency (f_T) of 230 GHz, and a maximum output power density of 3.7 mW/μm² at 29 GHz.

原文	???core.languages.en_GB???
頁（從 - 到）	49-52
頁數	4
期刊	Solid-State Electronics
卷	52
發行號	1
DOIs	https://doi.org/10.1016/j.sse.2007.06.009
出版狀態	已出版 - 1月 2008

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10.1016/j.sse.2007.06.009

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@article{efc57e06c4fe469eb8263b114ac71a46,

title = "An InP/InGaAs/InP DHBT with high power density at Ka-band",

abstract = "An InP/InGaAs/InP double heterojunction bipolar transistor was fabricated and its Ka-band power performance characterized. The device employed a 30 nm highly doped InGaAs base, and a 150 nm collector with an InAlGaAs linearly graded at the base-collector junction to prevent current blocking and maintain breakdown voltage. The dc current gain is 28.4 at a current density of JC = 666 kA/cm2 and the breakdown voltage (BVCEO) is larger than 5 V. A submicrometer InP/InGaAs DHBT with an emitter size of 0.6 × 12 μm2 demonstrated a maximum cutoff frequency (fT) of 230 GHz, and a maximum output power density of 3.7 mW/μm2 at 29 GHz.",

keywords = "DHBT, InP, Ka-band, Power performance",

author = "Wang, {Che ming} and Huang, {Shou Chien} and Huang, {Wei Kuo} and Hsin, {Yue ming}",

note = "Funding Information: The authors thank the National Science Council of the Republic of China, Taiwan, for financially supporting this research under Contract No. NSC_91-2215-E-008-012.",

year = "2008",

month = jan,

doi = "10.1016/j.sse.2007.06.009",

language = "???core.languages.en_GB???",

volume = "52",

pages = "49--52",

journal = "Solid-State Electronics",

issn = "0038-1101",

number = "1",

}

TY - JOUR

T1 - An InP/InGaAs/InP DHBT with high power density at Ka-band

AU - Wang, Che ming

AU - Huang, Shou Chien

AU - Huang, Wei Kuo

AU - Hsin, Yue ming

N1 - Funding Information: The authors thank the National Science Council of the Republic of China, Taiwan, for financially supporting this research under Contract No. NSC_91-2215-E-008-012.

PY - 2008/1

Y1 - 2008/1

N2 - An InP/InGaAs/InP double heterojunction bipolar transistor was fabricated and its Ka-band power performance characterized. The device employed a 30 nm highly doped InGaAs base, and a 150 nm collector with an InAlGaAs linearly graded at the base-collector junction to prevent current blocking and maintain breakdown voltage. The dc current gain is 28.4 at a current density of JC = 666 kA/cm2 and the breakdown voltage (BVCEO) is larger than 5 V. A submicrometer InP/InGaAs DHBT with an emitter size of 0.6 × 12 μm2 demonstrated a maximum cutoff frequency (fT) of 230 GHz, and a maximum output power density of 3.7 mW/μm2 at 29 GHz.

AB - An InP/InGaAs/InP double heterojunction bipolar transistor was fabricated and its Ka-band power performance characterized. The device employed a 30 nm highly doped InGaAs base, and a 150 nm collector with an InAlGaAs linearly graded at the base-collector junction to prevent current blocking and maintain breakdown voltage. The dc current gain is 28.4 at a current density of JC = 666 kA/cm2 and the breakdown voltage (BVCEO) is larger than 5 V. A submicrometer InP/InGaAs DHBT with an emitter size of 0.6 × 12 μm2 demonstrated a maximum cutoff frequency (fT) of 230 GHz, and a maximum output power density of 3.7 mW/μm2 at 29 GHz.

KW - DHBT

KW - InP

KW - Ka-band

KW - Power performance

UR - http://www.scopus.com/inward/record.url?scp=36249008559&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2007.06.009

DO - 10.1016/j.sse.2007.06.009

M3 - 期刊論文

AN - SCOPUS:36249008559

SN - 0038-1101

VL - 52

SP - 49

EP - 52

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 1

ER -

An InP/InGaAs/InP DHBT with high power density at Ka-band

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