An Innovative 1T1R Dipole Dynamic Random Access Memory (DiRAM) featuring high speed, ultra-low power, and low voltage operation

Keyphrases

• 1T1R 100%
• Bitline 33%
• CMOS Technology 33%
• Dipole Dynamics 100%
• Dipole Switching 33%
• Dynamic Random Access Memory 100%
• Flipping Mechanism 33%
• Interfacial Dipole 33%
• Low-voltage Operation 100%
• Memory-based 33%
• Nanopower 33%
• Negative Resistance 33%
• Switching Time 33%
• Ultra-low Power 100%
• Volatile Memory 66%
• Wordline 33%

Engineering

• Bit Line 33%
• Dynamic Random Access Memory 100%
• Switching Time 33%