摘要
Numerical simulation of semiconductor devices plays a very important role in the design and development of integrated circuits. We will present a new circuit simulator with an improved Levelized Incomplete LU method to perform such simulations. To have an environment for evaluating the interaction between a semiconductor device and a circuit, we use the equivalent circuit approach. This approach allows for simple representation carrier transport models of devices through equivalent circuit elements such as voltage controlled current sources and capacitors. Therefore, we can perform mixed-level simulation in general circuit simulators. We will take a PN diode switching circuit and MOSFET as examples to test our equivalent circuit model and the improved circuit simulator. The comparison between improved matrix solution method and the conventional method will be demonstrated too. We will also show our method yields better matrix solutions than conventional methods.
原文 | ???core.languages.en_GB??? |
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頁(從 - 到) | 389-396 |
頁數 | 8 |
期刊 | Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an |
卷 | 24 |
發行號 | 3 |
DOIs | |
出版狀態 | 已出版 - 2001 |