An experimental study of the energy band alignments of B(Al, Ga)N heterojunctions

Muzafar Ahmad Rather; Loganathan Ravi; Tung Yuan Yu; Chien Ting Wu; Kun Lin Lin; Kun Yu Lai; Jen Inn Chyi

doi:10.1063/5.0116951

An experimental study of the energy band alignments of B(Al, Ga)N heterojunctions

Muzafar Ahmad Rather, Loganathan Ravi, Tung Yuan Yu, Chien Ting Wu, Kun Lin Lin, Kun Yu Lai, Jen Inn Chyi

研究成果: 雜誌貢獻 › 期刊論文 › 同行評審

摘要

The range of applications of the common III-nitride semiconductors (Al, Ga, In)N can be extended through bandgap engineering with the inclusion of boron and forming their heterojunctions. In this study, the band alignments of B(Al, Ga)N alloys with common III-nitrides are investigated using x-ray photoemission spectroscopy. A type-I straddling-gap band alignment is identified for a B_0.06Ga_0.94N/AlN heterojunction with a valence band offset (VBO) and conduction band offset (CBO) of 1.1 ± 0.2 and 1.8 ± 0.2 eV, respectively, whereas a type-II band alignment is observed on a B_0.06Ga_0.94N/GaN heterojunction with a VBO of 0.3 ± 0.2 and a CBO of 0.2 ± 0.2 eV. In addition, a type-I band alignment is deduced for both the B_0.13Al_0.87N/AlN and B_0.13Al_0.87N/GaN heterojunctions.

原文	???core.languages.en_GB???
文章編號	012101
期刊	Applied Physics Letters
卷	123
發行號	1
DOIs	https://doi.org/10.1063/5.0116951
出版狀態	已出版 - 3 7月 2023

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10.1063/5.0116951

凡德瓦磊晶成長氮化鎵與其在電子元件之應用(3/3)
Chyi, J.-I. (PI)
1/08/21 → 31/07/22
研究計畫: Research
氮化硼鋁鎵銦異質結構磊晶與特性研究(3/3)
Chyi, J.-I. (PI)
1/08/20 → 31/07/21
研究計畫: Research

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title = "An experimental study of the energy band alignments of B(Al, Ga)N heterojunctions",

abstract = "The range of applications of the common III-nitride semiconductors (Al, Ga, In)N can be extended through bandgap engineering with the inclusion of boron and forming their heterojunctions. In this study, the band alignments of B(Al, Ga)N alloys with common III-nitrides are investigated using x-ray photoemission spectroscopy. A type-I straddling-gap band alignment is identified for a B0.06Ga0.94N/AlN heterojunction with a valence band offset (VBO) and conduction band offset (CBO) of 1.1 ± 0.2 and 1.8 ± 0.2 eV, respectively, whereas a type-II band alignment is observed on a B0.06Ga0.94N/GaN heterojunction with a VBO of 0.3 ± 0.2 and a CBO of 0.2 ± 0.2 eV. In addition, a type-I band alignment is deduced for both the B0.13Al0.87N/AlN and B0.13Al0.87N/GaN heterojunctions.",

author = "Rather, {Muzafar Ahmad} and Loganathan Ravi and Yu, {Tung Yuan} and Wu, {Chien Ting} and Lin, {Kun Lin} and Lai, {Kun Yu} and Chyi, {Jen Inn}",

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T1 - An experimental study of the energy band alignments of B(Al, Ga)N heterojunctions

AU - Rather, Muzafar Ahmad

AU - Ravi, Loganathan

AU - Yu, Tung Yuan

AU - Wu, Chien Ting

AU - Lin, Kun Lin

AU - Lai, Kun Yu

AU - Chyi, Jen Inn

PY - 2023/7/3

Y1 - 2023/7/3

N2 - The range of applications of the common III-nitride semiconductors (Al, Ga, In)N can be extended through bandgap engineering with the inclusion of boron and forming their heterojunctions. In this study, the band alignments of B(Al, Ga)N alloys with common III-nitrides are investigated using x-ray photoemission spectroscopy. A type-I straddling-gap band alignment is identified for a B0.06Ga0.94N/AlN heterojunction with a valence band offset (VBO) and conduction band offset (CBO) of 1.1 ± 0.2 and 1.8 ± 0.2 eV, respectively, whereas a type-II band alignment is observed on a B0.06Ga0.94N/GaN heterojunction with a VBO of 0.3 ± 0.2 and a CBO of 0.2 ± 0.2 eV. In addition, a type-I band alignment is deduced for both the B0.13Al0.87N/AlN and B0.13Al0.87N/GaN heterojunctions.

AB - The range of applications of the common III-nitride semiconductors (Al, Ga, In)N can be extended through bandgap engineering with the inclusion of boron and forming their heterojunctions. In this study, the band alignments of B(Al, Ga)N alloys with common III-nitrides are investigated using x-ray photoemission spectroscopy. A type-I straddling-gap band alignment is identified for a B0.06Ga0.94N/AlN heterojunction with a valence band offset (VBO) and conduction band offset (CBO) of 1.1 ± 0.2 and 1.8 ± 0.2 eV, respectively, whereas a type-II band alignment is observed on a B0.06Ga0.94N/GaN heterojunction with a VBO of 0.3 ± 0.2 and a CBO of 0.2 ± 0.2 eV. In addition, a type-I band alignment is deduced for both the B0.13Al0.87N/AlN and B0.13Al0.87N/GaN heterojunctions.

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SN - 0003-6951

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JO - Applied Physics Letters

JF - Applied Physics Letters

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An experimental study of the energy band alignments of B(Al, Ga)N heterojunctions

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凡德瓦磊晶成長氮化鎵與其在電子元件之應用(3/3)

氮化硼鋁鎵銦異質結構磊晶與特性研究(3/3)

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