An evaluation of SiGe/si HBT high efficiency power amplifiers for wide dynamic power control range application

Cheng Chieh Lin; Ping Chun Yeh; Hwann Kaeo Chiou

An evaluation of SiGe/si HBT high efficiency power amplifiers for wide dynamic power control range application

Cheng Chieh Lin, Ping Chun Yeh, Hwann Kaeo Chiou

電機工程學系

研究成果: 會議貢獻類型 › 會議論文 › 同行評審

1 引文斯高帕斯（Scopus）

摘要

This paper investigates three power amplifier circuit architectures for wide dynamic power control range application. These circuit architectures are the adaptive bias, classical Doherty and extended Doherty amplifiers which are implemented using TSMC 035μm SiGe HBT technology. These power amplifiers were designed in 2 GHz band over 70dB power control range. In order to compare the average power added efficiency (PAE_AVG) of the full power control range in different architectures, all amplifiers were intentionally designed with the same device size and therefore obtained the same maximum output power. The PAE_AvG of the adaptive bias amplifier is only 0.65% in the condition of 70dB power control range. The classical Doherty amplifier and four-ways extended Doherty amplifiers have been improved up to 2.04% and 3.78%, respectively. In contrast to the adaptive bias amplifier, the PAE_AVG of classical Doherty and four-ways extended Doherty amplifier have remarkably been improved of 314% and 581%, respectively.

原文	???core.languages.en_GB???
頁面	281-284
頁數	4
出版狀態	已出版 - 2004
事件	2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology - Tainan, Taiwan 持續時間: 6 12月 2004 → 9 12月 2004

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???event.eventtypes.event.conference???	2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology
國家/地區	Taiwan
城市	Tainan
期間	6/12/04 → 9/12/04

引用此

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title = "An evaluation of SiGe/si HBT high efficiency power amplifiers for wide dynamic power control range application",

abstract = "This paper investigates three power amplifier circuit architectures for wide dynamic power control range application. These circuit architectures are the adaptive bias, classical Doherty and extended Doherty amplifiers which are implemented using TSMC 035μm SiGe HBT technology. These power amplifiers were designed in 2 GHz band over 70dB power control range. In order to compare the average power added efficiency (PAEAVG) of the full power control range in different architectures, all amplifiers were intentionally designed with the same device size and therefore obtained the same maximum output power. The PAEAvG of the adaptive bias amplifier is only 0.65% in the condition of 70dB power control range. The classical Doherty amplifier and four-ways extended Doherty amplifiers have been improved up to 2.04% and 3.78%, respectively. In contrast to the adaptive bias amplifier, the PAEAVG of classical Doherty and four-ways extended Doherty amplifier have remarkably been improved of 314% and 581%, respectively.",

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An evaluation of SiGe/si HBT high efficiency power amplifiers for wide dynamic power control range application. / Lin, Cheng Chieh; Yeh, Ping Chun; Chiou, Hwann Kaeo.
2004. 281-284 論文發表於 2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology, Tainan, Taiwan.

研究成果: 會議貢獻類型 › 會議論文 › 同行評審

TY - CONF

T1 - An evaluation of SiGe/si HBT high efficiency power amplifiers for wide dynamic power control range application

AU - Lin, Cheng Chieh

AU - Yeh, Ping Chun

AU - Chiou, Hwann Kaeo

PY - 2004

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N2 - This paper investigates three power amplifier circuit architectures for wide dynamic power control range application. These circuit architectures are the adaptive bias, classical Doherty and extended Doherty amplifiers which are implemented using TSMC 035μm SiGe HBT technology. These power amplifiers were designed in 2 GHz band over 70dB power control range. In order to compare the average power added efficiency (PAEAVG) of the full power control range in different architectures, all amplifiers were intentionally designed with the same device size and therefore obtained the same maximum output power. The PAEAvG of the adaptive bias amplifier is only 0.65% in the condition of 70dB power control range. The classical Doherty amplifier and four-ways extended Doherty amplifiers have been improved up to 2.04% and 3.78%, respectively. In contrast to the adaptive bias amplifier, the PAEAVG of classical Doherty and four-ways extended Doherty amplifier have remarkably been improved of 314% and 581%, respectively.

AB - This paper investigates three power amplifier circuit architectures for wide dynamic power control range application. These circuit architectures are the adaptive bias, classical Doherty and extended Doherty amplifiers which are implemented using TSMC 035μm SiGe HBT technology. These power amplifiers were designed in 2 GHz band over 70dB power control range. In order to compare the average power added efficiency (PAEAVG) of the full power control range in different architectures, all amplifiers were intentionally designed with the same device size and therefore obtained the same maximum output power. The PAEAvG of the adaptive bias amplifier is only 0.65% in the condition of 70dB power control range. The classical Doherty amplifier and four-ways extended Doherty amplifiers have been improved up to 2.04% and 3.78%, respectively. In contrast to the adaptive bias amplifier, the PAEAVG of classical Doherty and four-ways extended Doherty amplifier have remarkably been improved of 314% and 581%, respectively.

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M3 - 會議論文

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T2 - 2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology

Y2 - 6 December 2004 through 9 December 2004

ER -

An evaluation of SiGe/si HBT high efficiency power amplifiers for wide dynamic power control range application

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