An efficient trapped-charge calculation in amorphous silicon for device simulation

Yao Tsung Tsai, Kuo Don Hong, Yin Lun Yuan

研究成果: 書貢獻/報告類型會議論文篇章同行評審

摘要

We present an efficient analytical model for calculating the trapped-charge density as a function of Fermi energy based on two exponential regions for density-of-states distribution in hydrogenated amorphous silicon. in this efficient model, the trappedcharge density is calculated without numerical integration and without curve fitting as a function of Fermi energy. Comparisons between the analytical and the numerical models have been made and excellent agreement has been obtained. Such a model is useful as an aid to study the impact on the performance of amorphous-silicon devices such as thin-film transistors.

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主出版物標題SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation
發行者Institute of Electrical and Electronics Engineers Inc.
頁面75-76
頁數2
ISBN(電子)0780312252, 9780780312258
DOIs
出版狀態已出版 - 1993
事件1993 Symposium on Semiconductor Modeling and Simulation, SMS 1993 - Taipei, Taiwan
持續時間: 6 3月 19937 3月 1993

出版系列

名字SMS 1993 Technical Digest - 1993 Symposium on Semiconductor Modeling and Simulation

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???event.eventtypes.event.conference???1993 Symposium on Semiconductor Modeling and Simulation, SMS 1993
國家/地區Taiwan
城市Taipei
期間6/03/937/03/93

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